lm5111-4myx National Semiconductor Corporation, lm5111-4myx Datasheet - Page 3

• Manufacturer Part Number: lm5111-4myx
• Description: Dual 5a Compound Gate Driver
• Manufacturer: National Semiconductor Corporation

V
V
I
CONTROL INPUTS
V
V
V
V
HYS
I
I
OUTPUT DRIVERS
R
R
I
I
CC
IL
IH
Source
Sink
CCR
CCH
IH
IL
thH
thL
OH
OL
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
T
V
IN to V
Symbol
J
CC
= −40°C to +125°C, V
to V
EE
EE
V
V
(rising)
V
Hysteresis
V
Logic High
Logic Low
High Threshold
Low Threshold
Input Hysteresis
Input Current Low
Input Current High
Output Resistance High
Output Resistance Low
Peak Source Current
Peak Sink Current
CC
CC
CC
CC
Operating Range
Supply Current (I
Under Voltage Lockout
Under Voltage Lockout
Parameter
CC
= 12V, V
CC
)
EE
= 0V, No Load on OUT_A or OUT_B, unless otherwise specified.
−0.3V to 15V
−0.3V to 15V
V
V
IN_A = IN_B = 0V (5111-1)
IN_A = IN_B = V
IN_A = V
IN_A=IN_B=V
IN_B=V
IN_A=IN_B=V
IN_A=IN_B=V
IN_A=V
I
I
OUTA/OUTB = V
200 ns Pulsed Current
OUTA/OUTB = V
200 ns Pulsed Current
OUT
OUT
(Note 1)
CC
CC
−V
−V
= −10 mA (Note 2)
= + 10 mA (Note 2)
EE
EE
CC
CC
CC
(5111-3)
(5111-3)
, IN_B = 0V (5111-3)
Conditions
CC
CC
CC
CC
3
(5111-1-2-3)
(5111-2)
(5111-1)
CC
CC
(5111-2)
/2,
/2,
Storage Temperature Range, (T
Maximum Junction Temperature,
Operating Junction Temperature
ESD Rating
(T
J
(max))
Min
3.5
2.3
2.2
1.3
0.8
−1
10
−1
10
-1
1.75
1.35
Typ
230
400
2.9
0.1
0.1
0.1
1.4
18
18
30
1
1
1
3
5
STG
)
−55°C to +150°C
Max
3.5
0.8
2.2
2.0
2.5
14
25
25
50
2
2
2
1
1
1
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+150°C
+125°C
Units
mV
mA
mV
2kV
µA
Ω
Ω
V
V
V
V
V
V
A
A