lm5111-4myx National Semiconductor Corporation, lm5111-4myx Datasheet - Page 4

• Manufacturer Part Number: lm5111-4myx
• Description: Dual 5a Compound Gate Driver
• Manufacturer: National Semiconductor Corporation

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SWITCHING CHARACTERISTICS
td1
td2
t
t
LATCHUP PROTECTION
THERMAL RESISTANCE
θ
θ
r
f
JA
JC
Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the
device is intended to be functional. For guaranteed specifications and test conditions, see the Electrical Characteristics.
Note 2: The output resistance specification applies to the MOS device only. The total output current capability is the sum of the MOS and Bipolar devices.
Timing Waveforms
Symbol
Propagation Delay Time Low to
High, IN rising (IN to OUT)
Propagation Delay Time High to
Low, IN falling (IN to OUT)
Rise Time
Fall Time
AEC - Q100, Method 004
Junction to Ambient,
0 LFPM Air Flow
Junction to Case
Parameter
(a)
FIGURE 1. (a) Inverting, (b) Non-Inverting
C
C
C
C
T
SOIC-8 Package
MSOP8-EP Package
SOIC-8 Package
MSOP8-EP Package
J
LOAD
LOAD
LOAD
LOAD
= 150°C
= 2 nF, see Figure 1
= 2 nF, see Figure 1
= 2 nF, see Figure 1
= 2 nF, see Figure 1
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Conditions
4
Min
(b)
Typ
500
170
4.7
25
25
14
12
60
70
Max
40
40
25
25
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Units
°C/W
°C/W
mA
ns
ns
ns
ns