lm5113sdx National Semiconductor Corporation, lm5113sdx Datasheet

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lm5113sdx

Manufacturer Part Number
lm5113sdx
Description
5a, 100v Half-bridge Gate Driver For Enhancement Mode Gan Fets
Manufacturer
National Semiconductor Corporation
Datasheet
1.LM5113SDX.pdf (10 pages)
© 2011 National Semiconductor Corporation
5A, 100V Half-Bridge Gate Driver for Enhancement Mode
GaN FETs
General Description
The LM5113 is designed to drive both the high-side and the
low-side enhancement mode Gallium Nitride (GaN) FETs in
a synchronous buck or a half bridge configuration. The float-
ing high-side driver is capable of driving a high-side enhance-
ment mode GaN FET operating up to 100V. The high-side
bias voltage is generated using a bootstrap technique and is
internally clamped at 5V, which prevents the gate voltage
from exceeding the maximum gate-source voltage rating of
enhancement mode GaN FETs. The inputs of the LM5113 are
TTL logic compatible, and can withstand input voltages up to
14V regardless of the VDD voltage. The LM5113 has split
gate outputs, providing flexibility to adjust the turn-on and
turn-off strength independently.
In addition, the strong sink capability of the LM5113 maintains
the gate in the low state, preventing unintended turn-on during
switching. The LM5113 can operate up to several MHz. The
LM5113 is available in a standard LLP-10 pin package, which
contains an exposed pad to aid power dissipation.
Simplified Block Diagram
301629
FIGURE 1.
LM5113
Features
■
■
■
■
■
■
■
■
■
■
Typical Applications
■
■
■
■
■
Package
■
Independent high-side and low-side TTL logic inputs
1.2A/5A peak source/sink current
High-side floating bias voltage rail operates up to 100VDC
Internal bootstrap supply voltage clamping
Split outputs for adjustable turn-on/turn-off strength
0.5Ω /2 Ω pull-down/pull-up resistance
Fast propagation times (30 ns typical)
Excellent propagation delay matching (2 ns typical)
Supply rail under-voltage lockout
Low power consumption
Current Fed Push-Pull converters
Half and Full Bridge converters
Synchronous Buck converters
Two-switch Forward converters
Forward with Active Clamp converters
LLP-10 (4 mm x 4 mm)
PRELIMINARY
30162903
June 29, 2011
www.national.com

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lm5113sdx Summary of contents

Page 1

... The LM5113 can operate up to several MHz. The LM5113 is available in a standard LLP-10 pin package, which contains an exposed pad to aid power dissipation. Simplified Block Diagram © 2011 National Semiconductor Corporation LM5113 Features ■ Independent high-side and low-side TTL logic inputs ■ ...

Page 2

... Truth Table Connection Diagrams Ordering Information Ordering Number Package Type LM5113SD LLP-10 LM5113SDE LLP-10 LM5113SDX LLP-10 www.national.com HOH HOL Open L Open L H Open H Open 30162901 NSC Package Drawing Supplied As SDC10A 1000 units shipped in Tape & Reel SDC10A 250 units shipped in Tape & ...

Page 3

Pin Descriptions Pin Number Name 1 VDD 5V Positive gate drive supply 2 HB High-side gate driver bootstrap rail 3 HOH High-side gate driver turn-on output Connect to the gate of high-side GaN FET with a short, low 4 HOL ...

Page 4

Absolute Maximum Ratings VDD to VSS VSS LOH, LOL to VSS HOH, HOL to VSS VSS HB to VSS HB to VDD Junction Temperature Electrical Characteristics Limits in standard type ...

Page 5

Switching Characteristics Limits in standard type are for T = 25°C only; limits in boldface type apply over the junction temperature (T J +125°C. Minimum and Maximum limits are guaranteed through test, design, or statistical correlation. Typical values represent the ...

Page 6

Detailed Operating Description The LM5113 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride FETs in a syn- chronous buck or a half-bridge configuration. The outputs of the LM5113 are independently controlled with TTL input ...

Page 7

Layout Considerations Small gate capacitance and miller capacitance enable en- hancement mode GaN FETs to operate with fast switching speed. The induced high dv/dt and di/dt, coupled with a low gate threshold voltage and limited headroom of enhancement mode GaN ...

Page 8

Physical Dimensions www.national.com inches (millimeters) unless otherwise noted LLP-10 Outline Drawing NS Package Number SDC10A 8 ...

Page 9

Notes 9 www.national.com ...

Page 10

... National Semiconductor and the National Semiconductor logo are registered trademarks of National Semiconductor Corporation. All other brand or product names may be trademarks or registered trademarks of their respective holders. ...

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