lm5113sdx National Semiconductor Corporation, lm5113sdx Datasheet - Page 3

• Manufacturer Part Number: lm5113sdx
• Description: 5a, 100v Half-bridge Gate Driver For Enhancement Mode Gan Fets
• Manufacturer: National Semiconductor Corporation

Pin Descriptions
Pin Number
EP
10
1
2
3
4
5
6
7
8
9
Name
HOH
VDD
HOL
LOH
VSS
LOL
HB
HS
HI
LI
5V Positive gate drive supply
High-side gate driver bootstrap rail
High-side gate driver turn-on output Connect to the gate of high-side GaN FET with a short, low
High-side gate driver turn-off output Connect to the gate of high-side GaN FET with a short, low
High-side GaN FET source
connection
High-side driver control input
Low-side driver control input
Ground return
Low-side gate driver turn-off output Connect to the gate of the low-side GaN FET with a short,
Low-side gate driver turn-on output Connect to the gate of high-side GaN FET with a short, low
EP
Description
3
Locally decouple to VSS using low ESR/ESL capacitor
located as close to the IC as possible.
Connect the positive terminal of the bootstrap capacitor to
HB and the negative terminal to HS. The bootstrap
capacitor should be placed as close to the IC as possible.
inductance path.
inductance path.
Connect to the bootstrap capacitor negative terminal and
the source of the high-side GaN FET.
The LM5113 inputs have TTL type thresholds. Unused
inputs should be tied to ground and not left open.
The LM5113 inputs have TTL type thresholds. Unused
inputs should be tied to ground and not left open.
All signals are referenced to this ground.
low inductance path.
inductance path.
It is recommended that the exposed pad on the bottom of
the package be soldered to ground plane on the PC board
to aid thermal dissipation.
Applications Information
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