zxms6006dt8 Diodes, Inc., zxms6006dt8 Datasheet - Page 3

• Manufacturer Part Number: zxms6006dt8
• Description: 60v Dual N-channel Self Protected Enhancement Mode Intellifet ? Mosfet
• Manufacturer: Diodes, Inc.

Thermal Characteristics
Maximum Ratings
Continuous Drain-Source Voltage
Drain-Source Voltage For Short Circuit Protection
Continuous Input Voltage
Continuous Input Current @-0.2V ≤ V
Continuous Input Current @V
Pulsed Drain Current @V
Pulsed Drain Current @V
Continuous Source Current (Body Diode) (Note 4)
Pulsed Source Current (Body Diode)
Unclamped Single Pulse Inductive Energy,
T
Electrostatic Discharge (Human Body Model)
Charged Device Model
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Notes 4 & 7)
Thermal Resistance, Junction to Ambient (Notes 4 & 8)
Thermal Resistance, Junction to Case (Notes 5 & 7)
Thermal Resistance, Junction to Case (Note 9)
Operating Temperature Range
Storage Temperature Range
Notes:
ZXMS6006DT8
Document number: DS35143 Rev. 1 - 2
IntelliFET
J
= 25°C, I
4. For a dual device surface mounted on a 25mm x 25mm single sided 1oz weight copper split down the middle on 1.6mm FR4 board, in still air conditions.
5. For a dual device surface mounted on FR4 PCB measured at t≤ 10sec
6. Repetitive rating25mm x 25mm FR4 PCB, D = 0.02, Pulse width = 300µs – pulse width limited by junction temperature. Refer to transient thermal
7. For a dual device with one active die.
8. For a dual device with 2 active die running at equal power.
9. Thermal resistance from junction to the mounting surface of the drain pin.
D
®
impedance graph.
= 0.5A, V
is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
A
A
A
DD
= 25°C (Notes 4 & 7)
= 25°C (Notes 4 & 8)
= 25°C (Notes 5 & 7)
IN
IN
= 24V
Characteristic
= 3.3V ( Note 6)
= 5V ( Note 6)
Characteristic
@T
IN
< -0.2V or V
A
= 25°C unless otherwise specified
IN
@T
≤ 6V
A
IN
= 25°C unless otherwise specified
> 6V
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Symbol
V
Symbol
V
V
DS(SC)
V
E
T
V
I
I
R
R
R
R
I
I
CDM
DM
DM
I
SM
ESD
P
P
P
DS
IN
AS
T
STG
S
IN
θJA
θJA
θJC
θJC
D
D
D
J
-0.5 ... +6
-40 to +150
-55 to +150
│I
Diodes Incorporated
No limit
Value
4000
1000
Value
IN
210
1.16
9.28
1.67
13.3
2.13
58.7
26.5
60
16
11
13
12
108
A Product Line of
2
17
75
│≤2
ZXMS6006DT8
© Diodes Incorporated
December 2010
mW/°C
mW/°C
mW/°C
Units
Units
°C/W
°C/W
°C/W
°C/W
mA
mJ
°C
°C
V
V
V
A
A
A
A
V
V
W
W
W