zxms6006dt8 Diodes, Inc., zxms6006dt8 Datasheet - Page 5

• Manufacturer Part Number: zxms6006dt8
• Description: 60v Dual N-channel Self Protected Enhancement Mode Intellifet ? Mosfet
• Manufacturer: Diodes, Inc.

Electrical Characteristics
Static Characteristics
Drain-Source Clamp Voltage
Off State Drain Current
Input Threshold Voltage
Input Current
Input Current while Over Temperature Active
Static Drain-Source On-State Resistance
Continuous Drain Current (Notes 4 & 8)
Continuous Drain Current (Notes 4 & 7)
Current Limit (Note 10)
Dynamic Characteristics
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Over-Temperature Protection
Thermal Overload Trip Temperature (Note 11)
Thermal Hysteresis (Note 11)
Notes:
ZXMS6006DT8
Document number: DS35143 Rev. 1 - 2
IntelliFET
®
10. The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the
11. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal
is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
Characteristic
fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated
outside saturation makes current limit unnecessary.
operating range, so this part is not designed to withstand over-temperature for extended periods..
@T
A
= 25°C unless otherwise specified
Symbol
V
R
V
I
D(LIM)
t
t
DS(AZ)
I
DS(on)
d(on)
d(off)
T
DSS
IN(th)
I
I
IN
t
f
f
-
D
JT
r
f
f
Min
150
0.7
2.0
2.2
2.6
2.8
www.diodes.com
60
4
6
-
-
-
-
-
-
-
-
-
-
-
-
5 of 9
Typ
120
175
8.6
65
60
85
75
13
18
34
15
10
1
8
-
-
-
-
-
-
-
Max
400
100
200
125
100
1.5
70
1
2
-
-
-
-
-
-
-
-
-
-
-
-
Unit
Diodes Incorporated
mΩ
µA
μA
μA
°C
°C
μs
μs
μs
μs
V
V
A
A
A Product Line of
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
D
DS
DS
DS
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
DD
= 10mA
= +3V
= +5V
= +5V
= +3V, I
= +5V, I
= 3V; T
= 5V; T
= 3V; T
= 5V; T
= +3V
= +5V
= 12V, V
= 36V, V
= V
= 12V, I
ZXMS6006DT8
GS
Test Condition
, I
A
A
A
A
D
D
D
D
= 25°C
= 25°C
= 25°C
= 25°C
IN
IN
= 1A
= 1A
= 1mA
= 1A, V
= 0V
= 0V
-
-
© Diodes Incorporated
December 2010
GS
= 5V