zxms6006dt8 Diodes, Inc., zxms6006dt8 Datasheet - Page 4

• Manufacturer Part Number: zxms6006dt8
• Description: 60v Dual N-channel Self Protected Enhancement Mode Intellifet ? Mosfet
• Manufacturer: Diodes, Inc.

Recommended Operating Conditions
Thermal Characteristics
Input Voltage Range
Ambient Temperature Range
High Level Input Voltage for MOSFET to be on
Low Level Input Voltage for MOSFET to be off
Peripheral Supply Voltage (voltage to which load is referred)
The ZXMS6006DT8 is optimized for use with µC operating from 3.3V and 5V supplies.
ZXMS6006DT8
Document number: DS35143 Rev. 1 - 2
IntelliFET
®
is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
100m
10m
120
100
80
60
40
20
10
100µ
0
1
Transient Thermal Impedance
Limited
by R
25X25X1.6mm FR4
D=0.5
D=0.2
25X25X1.6mm FR4
DC
Characteristic
Single 1oz Cu
One active die
DS(on)
One active die
V
Single 1oz Cu
1m
Safe Operating Area
T
DS
amb
1s
=25°C
Drain-Source Voltage (V)
10m 100m
1
Pulse Width (s)
Limited by Over-Current Protection
100ms
Limit of s/c protection
10ms
1
D=0.1
10
D=0.05
10
Single Pulse
Single Pulse
T amb =25°C
100
1ms
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1k
4 of 9
Symbol
100
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
V
V
1
100µ
V
T
V
IN
IH
A
IL
P
0
Pulse Power Dissipation
1m
25
1 active die
Temperature (°C)
10m 100m
Derating Curve
Pulse Width (s)
50
Min
-40
0
3
0
0
Diodes Incorporated
75
25X25X1.6mm FR4
A Product Line of
One active die
Single 1oz Cu
2 active die
Single Pulse
1
T
amb
100
=25°C
10
Max
125
5.5
5.5
0.7
16
ZXMS6006DT8
125
100
150
1k
© Diodes Incorporated
December 2010
Unit
°C
V
V
V
V