ap16n50i APEC, ap16n50i Datasheet - Page 2

• Manufacturer Part Number: ap16n50i
• Description: N-channel Enhancement Mode Power Mosfet
• Manufacturer: APEC

THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
V
t
Q
Notes:
1.Pulse width limited by Max junction temperature.
2.Pulse test
AP16N50I
Electrical Characteristics@T
Source-Drain Diode
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
rr
DSS
Symbol
Symbol
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
2
2
2
2
j
=25
o
C(unless otherwise specified)
2
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
DS
DS
DS
GS
DS
GS
DD
GS
DS
G
D
=16A, V
=16A, V
=16A
=8A
=25Ω
=50Ω,V
=V
=10V, I
=500V, V
=400V
=15V
=0V, I
=10V, I
=±20V
=10V
=200V
=0V
GS
Test Conditions
Test Conditions
, I
D
GS
GS
D
=1mA
D
D
GS
=250uA
=8A
=0V
=0V
=6.5A
GS
=10V
=0V
Min.
Min.
500
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1950 3120
Typ.
141
Typ.
630
495
55
50
33
11
40
20
10
8
9
-
-
-
-
-
-
Max. Units
±100
Max. Units
0.4
1.3
25
53
5
-
-
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
uA
nA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
uC
V
V
S
V
2/4