tza1000 NXP Semiconductors, tza1000 Datasheet - Page 15

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tza1000

Manufacturer Part Number
tza1000
Description
Qic Read-write Amplifier
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
1998 Mar 17
Z
V
THD
G
V
V
I
I
RES
Z
G
B
f
I
V
RES
V
V
I
V
V
sense
sense(max)
coupling(FBamp)
bias
o
i
V
o(sense)
V
V
I(6,7)
n(i)(eq)(servo)
I(1,3))
(-3dB)
O(23,24)
O(18,19)
o(rms)(18,19)
O(AGCL)
O(AGCH)
QIC read-write amplifier
v(servo)
v(FB)
VDD3-ISENSE
BIASA-BIASB
OO(18,19)
SYMBOL
DAC(SENSE)
DAC(BIAS)
input impedance
DC input voltage; pins 6 and 7
total harmonic distortion
servo preamplifier voltage gain WX-WY to output
equivalent input noise voltage:
servo pre-amp
DC input voltage pins 1 and 3
sense current
maximum sense current
voltage difference between
V
(pins 9 and 8)
sense DAC resolution
output impedance of sense
current source
FB amplifier voltage gain
amplifier
amplifier
bias current amplitude
(peak-to-peak)
DC voltage level of FB outputs
(pins 23 and 24)
voltage difference between
BIASA and BIASB
(pins 23 and 24) at maximum
DC bias voltage
bias DAC resolution
read amplifier DC output
voltage (pins 18 and 19)
read amplifier DC offset
voltage (voltage change at
pins 18 and 19)
output voltage (RMS value;
pins 18 and 19)
guaranteed output current
lower AGC detection voltage
level at OUTB
upper AGC detection voltage
level at OUTB
3 dB bandwidth of FB
3 dB AC coupling of FB
DD3
and ISENSE
PARAMETER
at 34 and 40 dB gain
settings; V
Z
R
note 3
all conditions; note 4
f = 1 kHz;
I
ENFB1 = 0; ENFB0 = 1
ENFB1 = 1; ENFB0 = 0 0
ENFB1 = ENFB0 = 1
B = 0; see Table 3
B = 31; see Table 3;
bias load 88
o(sen)
source
ref
= 430 ; S = 64;
CONDITIONS
= 16 mA
15
= 0
o(p-p)
= 1 V
1
1.2
2.4
14.6
33
1.6
10
11.5
1.6
1.4
2.4
1.5
2.15
2.75
62
10
10
MIN.
1.84
1.3
66
1.8
2.5
15.2
7
13
5
3
1.8
1.52
5
2.5
2.2
2.8
TYP.
Preliminary specification
4
1.4
70
2.8
2.6
15.8
13.2
14.5
+10
+9
+20
2.0
1.6
2.6
100
0.5
2.25
2.85
40
MAX.
TZA1000
k
V
dB
dB
nV/ Hz
V
mA
mA
V
bits
k
dB
MHz
kHz
mA
mA
mA
V
V
bits
V
mV
V
mA
V
V
UNIT

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