p89c538nbbb NXP Semiconductors, p89c538nbbb Datasheet - Page 26

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p89c538nbbb

Manufacturer Part Number
p89c538nbbb
Description
Cmos Single-chip 8-bit Microcontrollers With Flash Program Memory
Manufacturer
NXP Semiconductors
Datasheet
1. V
2. V
3. An influence may be had upon device reliability if the device is installed or removed while V
4. Do not alter V
5. V
6. If V
7. All currents are in RMS unless otherwise noted. (Sampled, not 100% tested.).
Philips Semiconductors
System Considerations
During the switch between active and standby conditions, transient
current peaks are produced on the rising and falling edges of Chip
Enable. The magnitude of these transient current peaks is
Command programming/Data programming/Erase Operation
DC CHARACTERISTICS
T
NOTES:
1997 Jun 05
amb
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
LI
LO
SB1
SB2
CC1
CC2
CC3
CC4
CC5
CC6
PP1
PP2
PP3
PP4
PP5
IL
IH
OL
OH
CMOS single-chip 8-bit microcontrollers
with FLASH program memory
CC
PP
IL
SYMBOL
= 0 C to 70 C, V
(Read)
(Program)
(Erase)
(Program Verify)
(Erase Verify)
(Read)
(Program)
(Program Verify)
(Erase Verify)
(Erase)
IH
min. = –0.5V for pulse width
C
must not exceed 14V including overshoot.
must be applied before V
C
SYMBOL
OUT
is over the specified maximum value, programming operation cannot be guaranteed.
IN
PP
from V
CC
PARAMETER
= 5V
IL
V
V
Input Leakage Current
Output Leakage Current
Standby V
Operating V
V
Input Voltage
Output Voltage Low
Output Voltage High
to 12V or 12V to V
PPH
PPH
PP
10%, V
Current
PP
PARAMETER
and removed after V
20ns.
CC
PP
CC
Current
= 12.0V
Current
IL
MIN
when CE=V
5%
V
V
CE = VI
CE = V
I
I
In Programming
In Erase
In Program Verify
In erase Verify
V
In Programming
In Erase
In Program Verify
In Erase Verify
I
I
OUT
OUT
OL
OH
IN
OUT
PP
PP
=2.1mA
=400uA
.
= GND to V
=12.6 V
= 0 mA, f=1 MHz
= 0 mA, F=11MHz
= GND to V
IL
CC
H
CONDITION
0.3 V
TYP
26
CC
CC
dependent on the output capacitance loading of the device. At a
minimum, a 0.1uF ceramic capacitor (high frequency, low inherent
inductance) should be used on each device between V
and between V
–0.5 (Note 5)
2.4
2.4
MAX
PP
14
16
MIN
and GND to minimize transient effects.
PP
=12V.
89C535/89C536/89C538
1
TYP
UNIT
PF
pF
10
10
1
100
30
50
50
50
50
50
100
50
50
50
50
0.2V
V
(Note 6)
0.45
CC
+0.3V
PP
Preliminary specification
MAX
– 0.3
CONDITION
V
VI
OUT
CC
N
and GND,
= 0V
= 0V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
UNIT
A
A
A
A

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