km41c4000d ETC-unknow, km41c4000d Datasheet - Page 3

• Manufacturer Part Number: km41c4000d
• Description: 4m X 1bit Cmos Dynamic Ram With Fast Page Mode
• Manufacturer: ETC-unknow

KM41C4000D, KM41V4000D
ABSOLUTE MAXIMUM RATINGS
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to
RECOMMENDED OPERATING CONDITIONS
*1 : V
*2 : - 1.3V/15ns(3.3V), - 2.0V/20ns(5V), Pulse width is measured at V
DC AND OPERATING CHARACTERISTICS
Voltage on any pin relative to V
Voltage on V
Storage Temperature
Power Dissipation
Short Circuit Output Current
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
3.3V
5V
CC
+1.3V/15ns(3.3V), V
Parameter
Input Leakage Current (Any input 0 V
all other input pins not under test=0 Volt)
Output Leakage Current
(Data out is disabled, 0V V
Output High Voltage Level(I
Output Low Voltage Level(I
Input Leakage Current (Any input 0 V
all other input pins not under test=0 Volt)
Output Leakage Current
(Data out is disabled, 0V V
Output High Voltage Level(I
Output Low Voltage Level(I
CC
supply relative to V
Parameter
CC
+2.0V/20ns(5V), Pulse width is measured at V
Symbol
SS
V
V
V
V
CC
Parameter
SS
IH
IL
SS
OL
OL
OUT
OUT
OH
OH
=2mA)
=4.2mA)
=-2mA)
=-5mA)
V
V
CC
CC
-0.3
)
)
Min
3.0
2.0
0
IN
IN
*2
V
V
CC
CC
V
Symbol
IN,
+0.3V,
+0.5V,
Tstg
V
I
P
OS
V
CC
D
OUT
(Recommended operating conditions unless otherwise noted.)
Typ
3.3V
3.3
0
-
-
(Voltage referenced to Vss, T
SS
V
CC
-0.5 to +4.6
-0.5 to +4.6
-55 to +150
Max
3.6
0.8
Symbol
+0.3
0
I
V
I
V
V
V
I
I
O(L)
O(L)
CC
I(L)
I(L)
3.3V
OH
OH
600
OL
OL
50
*1
-0.1
Min
4.5
2.4
0
Rating
*2
Min
2.4
2.4
-5
-5
-5
-5
-
-
A
= 0 to 70 C)
Typ
-55 to +150
5.0
-1 to +7.0
-1 to +7.0
5V
0
-
-
600
5V
50
Max
CMOS DRAM
V
0.4
0.4
5
5
5
5
-
-
CC
Max
5.5
0.8
+1.0
0
*1
Units
Units
mW
mA
Units
uA
uA
uA
uA
V
V
V
V
V
V
C
V
V
V
V