km41c4000d ETC-unknow, km41c4000d Datasheet - Page 6

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km41c4000d

Manufacturer Part Number
km41c4000d
Description
4m X 1bit Cmos Dynamic Ram With Fast Page Mode
Manufacturer
ETC-unknow
Datasheet

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KM41C4000D, KM41V4000D
AC CHARACTERISTICS
Data set-up time
Data hold time
Refresh period (Normal)
Refresh period (L-ver)
Write command set-up time
CAS to W delay time
RAS to W delay time
Column address to W delay time
CAS precharge to W delay time
CAS set-up time (CAS-before-RAS refresh)
CAS hold time (CAS-before-RAS refresh)
RAS to CAS precharge time
CAS precharge time (C-B-R counter test cycle)
Access time from CAS precharge
Fast Page mode cycle time
Fast Page read-modify-write cycle time
CAS precharge time (Fast Page cycle)
RAS pulse width (Fast Page cycle)
RAS hold time from CAS precharge
Write command set-up time (Test mode in)
Write command hold time (Test mode in)
W to RAS precharge time (C-B-R refresh)
W to RAS hold time (C-B-R refresh)
RAS pulse width (C-B-R self refresh)
RAS precharge time (C-B-R self refresh)
CAS Hold time (C-B-R self refresh)
Note) *1 : 5V only
Parameter
(0 C T
A
70 C, See note 2)
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Symbol
DS
DH
REF
REF
WCS
CWD
RWD
AWD
CPWD
CSR
CHR
RPC
CPT
CPA
PC
PRWC
CP
RASP
RHCP
WTS
WTH
WRP
WRH
RASS
RPS
CHS
Min
100
-50
10
15
50
25
30
10
10
20
35
53
10
50
30
10
10
10
10
90
0
0
5
-5
*1
200K
Max
128
16
30
Min
100
110
-50
10
15
60
30
35
10
10
20
40
60
10
60
35
10
10
10
10
0
0
5
-6
200K
Max
128
16
35
Min
100
130
-50
15
20
70
35
40
10
15
25
45
70
10
70
40
10
10
10
10
0
0
5
-7
200K
Max
128
CMOS DRAM
16
40
Units
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
14,15,16
14,15,16
14,15,16
Notes
9
9
7
7
7
7
7
3

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