tc59lm906amg TOSHIBA Semiconductor CORPORATION, tc59lm906amg Datasheet - Page 40

• Manufacturer Part Number: tc59lm906amg
• Description: Mos Digital Integrated Circuit Silicon Monolithic
• Manufacturer: TOSHIBA Semiconductor CORPORATION

DQS/ DQS
DQS/ DQS
Bank Add.
Bank Add.
BL
BL
Command
Command
WRITE with VARIAVLE WRITE LENGTH (VW) CONTROL (CL
Address
Address
(input)
(input)
(input)
(input)
2, SEQUENTIAL MODE
4, SEQUENTIAL MODE
CLK
CLK
DQ
DQ
Note: DQS ( DQS ) input must be continued till end of burst count even if some of laster data is masked.
WRA
Bank
WRA
Bank
UA
"a"
UA
"a"
0
VW=All
VW=All
LA=#3
LA=#3
VW0 = Low
VW1 = don't care
VW0 = High
VW1 = Low
LAL
LAL
1
Lower Address
Lower Address
2
DESL
DESL
3
D0 D1
#3 #2
D0 D1
#3 #0
4
WRA
Bank
WRA
Bank
UA
"a"
UA
"a"
D2 D3
#1 #2
5
LA=#1
LA=#1
VW=1
VW=1
VW0 = High
VW1 = don't care
VW0 = High
VW1 = High
LAL
LAL
6
7
DESL
8
Last three data are masked.
D0
#1 (#0)
D0
#1(#2)(#3)(#0)
Last one data is masked.
9
TC59LM914/06AMG-37,-50
WRA
Bank
UA
"a"
10
4)
LA=#2
VW=2
VW0 = Low
VW1 = High
LAL
DESL
11
2004-08-20 40/59
12
Last two data are masked.
13
DESL
#2 #3
D0 D1
14
Rev 1.0
(#0)(#1)
15