tc59ym916bkg24a ETC-unknow, tc59ym916bkg24a Datasheet - Page 61

no-image

tc59ym916bkg24a

Manufacturer Part Number
tc59ym916bkg24a
Description
The Second Generation 512-megabit Xdrtm Dram
Manufacturer
ETC-unknow
Datasheet
Operating Characteristics
Electrical Characteristics
component. The only exception is the supply current values (I
the
by the DQ pins when driving read data. This section is also concerned with the current needed by the VTERM pin,
and with the resistance levels produced for the internal termination components that attach to the DQ pins.
interface signals
Table 14 summarizes all electrical parameters (temperature, current and voltage) that characterize this memory
The first section of parameters is concerned with the thermal characteristics of the memory component.
The second section of parameters is concerned with the current needed by the RQ pins and VREF pin.
The third section of parameters is concerned with the current needed by the DQ pins and voltage levels produced
The fourth section of parameters determines the output voltage levels and the current needed for the serial
Θ
I
I
V
R
V
V
Supply Current Profile
I, RSL
REF, RSL
OSW,DQ
OL, SI
OH, SI
JC
TERM,DQ
SYMBOL
Junction-to-case thermal resistance
RSL RQ or Serial Interface input current @ (0 ≤ V
V
DRSL DQ outputs – high-low swing;
V
(V
(See Figure 27)
DRSL DQ outputs – termination resistance
RSL serial interface SDO output – low voltage
RSL serial interface SDO output – high voltage
REF, RSL
OSW,DQ
IH,DQ –
section.
V
=
current @ V
IL,DQN
Table 14. Electrical Characteristics
) or (V
REF, RSL, MAX
IH,DQN –
PARAMETER
TC59YM916BKG24A,32A,32B,40B,32C,40C
V
IL,DQ
flowing into VREF pin
)
DD
IN
) under different operating conditions covered in
ODF = 00
ODF = 01
ODF = 10
ODF = 11
≤ V
DD
)
V
Manufacturer-specific values
REF, RSL
0.225
TBD
TBD
TBD
TBD
MIN
40.0
−10
−10
0.0
+
2004-12-15 61/76
V
V
REF, RSL
TERM, RSL
0.350
MAX
TBD
TBD
TBD
60.0
TBD
10
10
Rev 0.1
°C/Watt
UNIT
µA
µA
V
V
V

Related parts for tc59ym916bkg24a