mje13009l-tf3-t Unisonic Technologies, mje13009l-tf3-t Datasheet - Page 2

• Manufacturer Part Number: mje13009l-tf3-t
• Description: Switchmode Series Npn Silicon Power Transistors
• Manufacturer: Unisonic Technologies

MJE13009
Collector-Emitter Voltage
Collector-Emitter Voltage (V
Emitter Base Voltage
Collector Current
Base Current
Emitter Current
Total Power Dissipation @ Ta = 25℃
Derate above 25℃
Total Power Dissipation @ T
Derate above 25℃
Junction Temperature
Storage Temperature
Note: 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
*OFF CHARACTERISTICS
Collector- Emitter Sustaining Voltage
Collector Cutoff Current
V
Emitter Cutoff Current
*ON CHARACTERISTICS
DC Current Gain
Current-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DYNAMIC CHARACTERISTICS
Transition frequency
Output Capacitance
SWITCHING CHARACTERISTICS (Resistive Load, Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
Inductive Load, Clamped (Table 1, Figure 13)
Voltage Storage Time
Crossover Time
*Pulse Test: Pulse Wieth = 300µs, Duty Cycle = 2%
CBO
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
=Rated Value
THERMAL DATA
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
PARAMETER
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
PARAMETER
BE
C
=-1.5V)
= 25℃
SYMBOL
V
V
V
h
CE(SAT)
BE(SAT)
h
I
I
t
C
EBO
CEV
DLY
CEO
FE 2
FE1
f
t
t
t
t
t
R
S
S
C
T
F
ob
Continuous
Peak*
Continuous
Peak*
Continuous
Peak*
(Ta = 25℃)
(T
I
V
V
V
I
I
I
I
I
I
I
I
I
I
V
V
I
Duty Cycle ≤1%
I
V
C
C
C
C
C
C
C
C
C
C
C
B1
C
C
BE(OFF)
BE(OFF)
EB
CB
CC
BE(OFF)
=8A, V
= 25℃, unless otherwise specified.)
= 10mA, I
= 5A,V
= 8A,V
= 5A, I
= 8A, I
= 12A, I
= 8A, I
= 5A, I
= 8A, I
= 8A, I
= 500mA, V
= I
= 9Vdc, I
= 10V, I
= 125Vdc, I
B2
TEST CONDITIONS
= 1.5Vdc
= 1.5Vdc, T
= 1.6A, t
= 5V, T
clamp
B
B
B
B
B
B
CE
CE
B
= 1A
= 1.6A
= 1.6A, T
= 1A
= 1.6A
= 1.6A, T
SYMBOL
SYMBOL
= 3A
= 5V
= 5V
B
E
=300V, I
C
= 0
= 0, f = 0.1MHz
V
V
V
T
CE
= 0
θ
I
I
I
θ
P
P
T
C
CEO
I
CEV
EBO
CM
I
BM
I
EM
STG
C
C
B
E
JA
JC
D
D
P
J
= 10V, f = 1MHz
= 100℃
= 8A
= 25µs
C
C
C
B1
= 100℃
= 100℃
= 100℃
=1.6A
NPN SILICON TRANSISTOR
-40 ~ +150
RATINGS
RATINGS
+150
400
700
100
800
12
24
12
18
36
16
54
MIN
400
9
6
2
4
4
TYP
0.06
0.45
0.92
0.12
180
1.3
0.2
MAX UNIT
1.5
1.2
1.6
1.5
0.1
0.7
2.3
0.7
40
30
QW-R203-024,E
1
5
1
1
3
2
1
3
mW/℃
mW/℃
UNIT
UNIT
℃/W
℃/W
2 of 8
W
W
℃
℃
MHz
V
V
V
A
A
A
mA
mA
pF
µs
µs
µs
µs
µs
µs
V
V
V
V
V
V
V
V