mje13009l-tf3-t Unisonic Technologies, mje13009l-tf3-t Datasheet - Page 6

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mje13009l-tf3-t

Manufacturer Part Number
mje13009l-tf3-t
Description
Switchmode Series Npn Silicon Power Transistors
Manufacturer
Unisonic Technologies
Datasheet
MJE13009
0.8
0.6
0.4
0.2
1
0
20
TYPICAL CHARATERISTICS
0.07
0.05
0.03
0.02
0.01
0.7
0.5
0.3
0.2
0.1
1
0.01
40
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
0.01
D = 0.5
Figure 3. Forward Bias Power Derating
0.05
0.02
0.02
0.1
0.2
Case Temperature, T
60
Derating
Thermal
Single Pulse
0.05
80
0.1
100
Second Breakdown
C
(°C)
0.2
120
Derating
140
Figure 4. Typical Thermal Response [Z
0.5
160
1
Time, t (ms)
2
Z
θ
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
θ JC(t)
J(pk)
JC
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate I
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves
indicate.
depending on power level. Second breakdown pulse limits are
valid for duty cycles to 10% but must be derated when T
Second breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on Figure 1
may be found at any case temperature by using the appropriate
curve on Figure 3.
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations imposed
by second breakdown. Use of reverse biased safe operating
area data (Figure 2) is discussed in the applications information
section.
= 1.25°C/W MAX
– T
5
There are two limitations on the power handling ability of a
The data of Figure 1 is based on T
T
= r(t)
J(pk)
C
= P
may be calculated from the data in Figure 4. At high
θ
10
(pk)
JC
θ JC
1
Z
θ JC(t)
NPN SILICON TRANSISTOR
(t)]
20
50
P
(pk)
Duty Cycle, D = t
100
C
C
t
–V
1
= 25℃; T
t
2
CE
200
limits of the transistor
J(pk)
1
/t
is variable
500
QW-R203-024,E
2
C
≥ 25℃.
1.0k
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