hn7g03fu TOSHIBA Semiconductor CORPORATION, hn7g03fu Datasheet
hn7g03fu
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hn7g03fu Summary of contents
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... TOSHIBA − Weight: 6.8 mg (typ.) ) Symbol Rating Unit GSS I 100 mA D (Ta = 25°C) Symbol Rating Unit P* 200 mW °C T 125 j −55~125 °C T stg 1 HN7G03FU Unit: mm 1.EMITTER 2.BASE 3.DRAIN 4.SOURCE 5.GATE 6.COLLECTOR US6 ― ― 2-2J1E 2005-03-23 ...
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... D R ― mA 2.5 V DS(ON ― Equivalent Circuit HN7G03FU Min Typ. Max Unit −0.1 ― ― µA −0.1 ― ― µA 300 ― 1000 −15 −30 ― mV −110 −250 ― −0.87 −1.2 ― ...
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... Q1 3 HN7G03FU 2005-03-23 ...
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... COMMON SOURCE VDS = 3 V 100 10 1 0.1 0.01 −1.0 −1.2 0 0.5 GATE-SOURCE VOLTAGE V (V) DS 100 100 0.1 0.3 (mA) DRAIN-SOURCE VOLTAGE V 4 HN7G03FU (LOW-VOLTAGE REGION) 2.0 2.5 2.2 COMMON SOUCE Ta = 25°C 1.8 1 1.4 V 0.4 0.6 0.8 1.0 ( – 100°C 25°C −25°C 1 1.5 2 2 – ...
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... Q2 5 HN7G03FU 2005-03-23 ...
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... Q1, Q2 common * P – Ta 400 300 200 100 100 125 AMBIENT TEMPERATURE Ta (°C) *:Total rating 150 175 6 HN7G03FU 2005-03-23 ...
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... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 HN7G03FU 030619EAA 2005-03-23 ...