hn7g03fu TOSHIBA Semiconductor CORPORATION, hn7g03fu Datasheet - Page 4

• Manufacturer Part Number: hn7g03fu
• Description: Toshiba Multichip Discrete Device
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q2
0.01
100
100
300
100
0.1
80
60
40
20
10
50
30
10
0
1
5
0
0
1
COMMOM SOURCE
VGS = 0
Ta = 25°C
COMMON SOURCE
VDS = 3 V
Ta = 25°C
G
DRAIN-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE V
2.5
−0.2
DRAIN CURRENT I
2
D
S
3
2.0
−0.4
1.9
I DR
5
4
I
⎪Y
DR
I
D
1.8
fs
– V
−0.6
– V
10
⎪ – I
1.7
DS
DS
COMMON SOURCE
Ta = 25°C
D
6
D
−0.8
(mA)
30
DS
DS
V GS = 1.4 V
8
−1.0
1.6
50
(V)
(V)
−1.2
100
10
4
1000
0.01
100
100
100
0.1
80
60
40
20
10
50
30
10
0
1
5
3
1
0.1
0
0
COMMON SOURCE
VDS = 3 V
I
D
DRAIN-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE V
GATE-SOURCE VOLTAGE V
– V
0.5
DS
4.0
0.3
0.2
Ta = 100°C
25°C
(LOW-VOLTAGE REGION)
2.5
1
0.4
1
I
C – V
D
−25°C
– V
1.5
2.2
DS
GS
0.6
3
COMMON SOUCE
Ta = 25°C
COMMON SOURCE
VGS = 0
f = 1 MHz
Ta = 25°C
2
HN7G03FU
GS
DS
DS
V GS = 1.4 V
0.8
10
2.0
2005-03-23
2.5
C oss
C rss
C iss
(V)
(V)
(V)
1.8
1.6
1.0
30
3