m24l416256sa Elite Semiconductor Memory Technology Inc., m24l416256sa Datasheet - Page 5

• Manufacturer Part Number: m24l416256sa
• Description: 4-mbit 256k X 16 Pseudo Static Ram
• Manufacturer: Elite Semiconductor Memory Technology Inc.

ESMT
AC Test Loads and Waveforms
Switching Characteristics (Over the Operating Range)[10]
Prameter
Read Cycle
t
t
t
t
t
t
t
t
t
t
t
t
t
Write Cycle[12]
t
t
t
t
t
t
Notes:
10. Test conditions for all parameters other than tri-state parameters assume signal transition time of 1 ns/V, timing reference
11. t
12. The internal Write time of the memory is defined by the overlap of WE , CE = V
13. High-Z and Low-Z parameters are characterized and are not 100% tested.
14. To achieve 55-ns performance, the read access should be CE controlled. In this case t
Elite Semiconductor Memory Technology Inc.
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
DBE
LZBE
HZBE
SK
WC
SCE
AW
HA
SA
PWE
[14]
levels of V
Loads and Waveforms” section.
must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input set-up
and hold timing should be referenced to the edge of the signal that terminates the write.
satisfied when the addresses are stable prior to chip enable going active. For the 70-ns cycle, the addresses must be stable
within 10 ns after the start of the read cycle.
HZOE
, t
HZCE
Parameters
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
BLE / BHE LOW to Data Valid
Address Skew
Write Cycle Time
Address Set-up to Write End
Address Hold from Write End
Address Set-up to Write Start
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z[11, 13]
OE HIGH to High Z[11, 13]
CE LOW to Low Z[11, 13]
CE HIGH to High Z[11, 13]
BLE / BHE LOW to Low Z[11, 13]
BLE / BHE HIGH to High-Z[11, 13]
CE LOW to Write End
WE Pulse Width
, t
CC(typ)
HZBE
R
V
R1
R2
TH
TH
/2, input pulse levels of 0V to V
, and t
Description
HZWE
transitions are measured when the outputs enter a high impedance state.
CC(typ.)
Min.
55
55
45
45
40
5
5
2
5
0
0
, and output loading of the specified I
3.0V V
–55
22000
22000
11000
1.50
Max.
CC
55
55
25
25
25
55
10
0
Min.
60
60
45
45
40
8
5
2
5
0
0
–60
Max.
60
60
25
25
25
60
10
5
IL
, BHE and/or BLE = V
Publication Date: Jul. 2008
Revision: 1.4
ACE
M24L416256SA
is the critical parameter and t
OL
Min.
/I
70
10
70
60
55
45
5
5
5
0
0
OH
as shown in the “AC Test
–70
Unit
Ω
Ω
Ω
V
Max.
70
70
35
25
25
70
25
10
IL
. All signals
5/14
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
SK
is