dg648bh Dynex Semiconductor, dg648bh Datasheet - Page 16

• Manufacturer Part Number: dg648bh
• Description: Gate Turn-off Gto - 4500v
• Manufacturer: Dynex Semiconductor

DG648BH45
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7000
6000
5000
4000
3000
20
1000
Fig.28 Rate of rise of off-state voltage vs gate cathode resistance
Fig.27 Turn-off gate charge vs rate of rise of reverse gate current
500
0
0.1
V
Rate of rise of reverse gate current dI
D
= 3000V
30
Gate cathode resistance R
1.0
V
D
= 2250V
40
10
50
GK
- (Ohms)
GQ
100
/dt - (A/µs)
T
60
j
Conditions:
C
I
T
= 125˚C
T
T
S
= 2000A
J
j
= 2.0µF,
= 125˚C
= 25˚C
1000
70