dg648bh Dynex Semiconductor, dg648bh Datasheet - Page 4
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dg648bh
Manufacturer Part Number
dg648bh
Description
Gate Turn-off Gto - 4500v
Manufacturer
Dynex Semiconductor
Datasheet
1.DG648BH.pdf
(19 pages)
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DG648BH45
CURVES
4/19
4000
3000
2000
1000
Fig.1 Maximum gate trigger voltage/current vs junction temperature
0
0
Measured under pulse conditions.
I
Half sine wave 10ms
2.0
1.5
1.0
0.5
G(ON)
0
-50
= 7A
-25
1.0
Instantaneous on-state voltage V
Junction temperature T
Fig.2 On-state characteristics
0
25
2.0
50
T
j
= 25˚C
75
3.0
j
- (˚C)
100
TM
- (V)
125
4.0
V
I
GT
T
GT
j
150
= 125˚C
8.0
6.0
4.0
2.0
0
5.0
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