dg648bh Dynex Semiconductor, dg648bh Datasheet - Page 17
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dg648bh
Manufacturer Part Number
dg648bh
Description
Gate Turn-off Gto - 4500v
Manufacturer
Dynex Semiconductor
Datasheet
1.DG648BH.pdf
(19 pages)
- Current page: 17 of 19
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dI FG /dt
These are recommended Dynex Semiconductor conditions. Other conditions are permitted
0.1I FG
Recommended gate conditions:
I
I
I
t
I
di
Q
V
V
TCM
FG
G(ON)
w1(min)
GQM
RG(min)
RG(max)
GQ
GQ
V D
= 30A
/dt = 40A/ s
0.9V D
= 2000A
= 6000 C
= 690A
= 7A d.c.
= 20 s
= 2V
= 16V
t d
t gt
t w1
t r
V FG
I FG
0.1V D
according to users gate drive specifications.
Fig.29 General switching waveforms
0.1I GQ
0.5I GQM
Q GQ
I GQM
I T
V DP
t gs
I G(ON)
t gq
0.9I T
t gf
dV D /dt
I TAIL
V (RG)BR
V D V DM
V RG
DG648BH45
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