f25l008a Elite Semiconductor Memory Technology Inc., f25l008a Datasheet - Page 20

• Manufacturer Part Number: f25l008a
• Description: 3v Only Serial Flash Memory
• Manufacturer: Elite Semiconductor Memory Technology Inc.

ESMT
ELECTRICAL SPECIFICATIONS
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the
device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure
to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . -2.0V to VDD+2.0V
Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
Output Short Circuit Current1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1.
AC CONDITIONS OF TEST
TABLE 6: DC OPERATING CHARACTERISTICS V
TABLE 7 : RECOMMENDED SYSTEM POWER-UP TIMINGS
1.
TABLE 8: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)
C
C
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
Elite Semiconductor Memory Technology Inc.
Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . . . . C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .C
See Figures 12 and 13
Symbol
Parameter
OUT
IN
I
I
I
I
I
V
V
V
V
T
T
DDR
DDW
SB
LI
LO
1
IL
IH
OL
OH
Symbol
PU-READ
PU-WRITE
Output shorted for no more than one second. No more than one output shorted at a time.
This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1
1
1
Read Current
Program and Erase Current
Standby Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Pin Capacitance
Input Capacitance
V
V
DD
DD
Min to Read Operation
Min to Write Operation
Parameter
L
L
= 15 pF for ≧75MHz
= 30 pF for ≦50MHz
Description
Parameter
0.7 V
V
DD
Min
DD
-0.2
= 2.7-3.6V ; TA=0~70oC
DD
Limits
Max
0.8
0.2
15
40
75
1
1
Units
mA
mA
µA
µA
µA
V
V
V
V
V
V
V
V
I
I
CE =0.1 V
CE =V
CE =V
OL
OH
IN
OUT
DD
DD
=100 µA, V
=-100 µA, V
=GND to V
=V
=V
=GND to V
DD
DD
DD
DD
, VIN=V
Min
Max
DD
/0.9 V
DD
DD
DD
DD
, V
=V
DD
=V
, V
Publication Date: Jul. 2008
Revision:
DD
Test Conditions
DD
DD
Test Condition
or V
DD
DD
@33 MHz, SO=open
=V
Min
Minimum
V
Min
=V
V
OUT
SS
DD
IN
DD
10
10
= 0V
Max
= 0V
Max
1.6
F25L008A
Maximum
Units
12 pF
6 pF
µs
µs
20/32