as7c33128pfs32a-166tqi Alliance Memory, Inc, as7c33128pfs32a-166tqi Datasheet - Page 10

• Manufacturer Part Number: as7c33128pfs32a-166tqi
• Description: 3.3v 128k 32/36 Pipeline Burst Synchronous Sram
• Manufacturer: Alliance Memory, Inc

AC test conditions
Notes
1
2
3
4
5
6
7
8
Package Dimensions
100-pin quad flat pack (TQFP)
Dimensions in millimeters
2/1/01
c
• Output load: see Figure B, except for t
• Input pulse level: GND to 3V. See Figure A.
• Input rise and fall time (measured at 0.3V and 2.7V): 2 ns. See Figure A.
• Input and output timing reference levels: 1.5V.
+3.0V
For test conditions, see AC Test Conditions, Figures A, B, C.
This parameter measured with output load condition in Figure C.
This parameter is sampled, but not 100% tested.
t
tCH measured as HIGH above VIH and tCL measured as LOW below VIL.
This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK. All other synchronous inputs must
meet the setup and hold times for all rising edges of CLK when chip is enabled.
Write refers to
Chip select refers to
HZOE
GND
Hd
A1
A2
He
L1
D
b
c
E
e
L
L1
L
Figure A: Input waveform
10%
is less than t
90%
13.90
19.90
15.90
21.90
0.05
1.35
0.22
0.09
0.45
Min
0°
0.65 nominal
1.00 nominal
GWE
TQFP
LZOE
CE0
,
BWE
; and t
14.10
20.10
16.10
22.10
0.15
1.45
0.38
0.20
0.75
Max
7°
,
CE1
,
90%
HZC
BW[a:d].
,
10%
CE2
is less than t
.
D
OUT
LZC
LZC
at any given temperature and voltage.
, t
Figure B: Output load (A)
LZOE
Alliance Semiconductor
Z
A1 A2
0
, t
= 50
HZOE
He E
, t
HZC
, see Figure C.
50
30 pF*
V
®
L
for 3.3V I/O;
= V
for 2.5V I/O
= 1.5V
DDQ
/2
Hd
D
D
351
OUT
Figure C: Output load(B)
Thevenin equivalent:
+3.3V for 3.3V I/O;
+2.5V for 2.5V I/O
317
5 pF*
GND
7C33128PFS32A
7C33128PFS36A
*including scope
b
e
and jig capacitance
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