as6c2016 Alliance Memory, Inc, as6c2016 Datasheet
as6c2016
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as6c2016 Summary of contents
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... It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C2016 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The AS6C2016 operates from a single power supply of 2 ...
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... SYMBOL A0 - A16 DQ0 – DQ15 Data Inputs/Outputs CE# 128Kx16 WE# MEMORY ARRAY OE# LB# UB COLUMN I/O Alliance Memory Inc. AS6C2016 DESCRIPTION Address Inputs Chip Enable Input Write Enable Input Output Enable Input Lower Byte Control Upper Byte Control Power Supply Ground Page ...
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... DQ9 29 DQ8 A10 24 A11 23 NC SYMBOL STG OUT T SOLDER Alliance Memory Inc. AS6C2016 A LB# OE DQ8 UB CE# DQ0 C DQ9 DQ10 A5 A6 DQ1 DQ2 D Vss DQ11 NC A7 DQ3 Vcc E Vcc DQ12 ...
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... CE 0. Others at 0. 0.2V CC (TYP.) and SYMBOL MIN I/O Alliance Memory Inc. AS6C2016 SUPPLY CURRENT DQ8-DQ15 High – SB1 High – Z High – CC1 High – Z High – CC1 OUT D OUT High – Z ...
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... SYM. AS6C2016-55 MIN. MAX WHZ Alliance Memory Inc. AS6C2016 - 0. -2mA/4mA OH OL UNIT UNIT Page ...
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... OE t OLZ t BLZ t CLZ Data Valid . = 5pF. Transition is measured ±500mV from steady state less than less than t CHZ CLZ BHZ Alliance Memory Inc. AS6C2016 OHZ t BHZ t CHZ High-Z is the limiting parameter less than t BLZ OHZ OLZ. ...
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... X 8 BIT LOW POWER CMOS SRAM 128K X 16 BIT LOW POWER CMOS SRAM WHZ High-Z ( Data Valid WHZ High-Z ( Data Valid Alliance Memory Inc. AS6C2016 ( Page ...
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... X 8 BIT LOW POWER CMOS SRAM 128K X 16 BIT LOW POWER CMOS SRAM (1,2,5, WHZ High-Z ( Data Valid must be greater than t WP WHZ Alliance Memory Inc. AS6C2016 allow the drivers to turn off and data Page ...
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... CE 0. Other pins at 0. -0.2V CC See Data Retention Waveforms (below) (CE# controlled) > > CE# Vcc-0.2V = (LB#, UB# controlled) > 2.0V DR > LB#,UB# Vcc-0.2V = Alliance Memory Inc. AS6C2016 MIN. TYP. MAX. UNIT 2 Vcc(min Vcc(min Page µ ...
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... X 16 BIT LOW POWER CMOS SRAM NOM. MAX. MIN. - 1.20 0.10 0.15 2.0 1.00 1.05 37.4 - 0.45 11.8 - 0.21 4.7 18.415 18.618 717 11.760 12.014 453 10.160 10.363 392 0.800 - 0.50 0.60 15.7 0.805 - - 0.076 Alliance Memory Inc. AS6C2016 DIMENSIONS IN MILS NOM. MAX 47.2 3.9 5.9 39.4 41.3 - 17.7 - 8.3 725 733 463 473 400 408 - 31.5 - 19.7 23 Page ...
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... January 2007 FEBRUARY 2008 48-ball 6mm × 8mm TFBGA Package Outline Dimension FEBRUARY/2008, V 1.c 512K X 8 BIT LOW POWER CMOS SRAM 128K X 16 BIT LOW POWER CMOS SRAM Alliance Memory Inc. AS6C2016 Page ...
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... X 16 BIT LOW POWER CMOS SRAM VCC Package Range 2.7 - 5.5V 44pin TSOP II 2.7 - 5.5V 48ball TFBGA -55 X Package Option 44pin TSOP II Access Time 48ball TFBGA Alliance Memory Inc. AS6C2016 Speed Operating Temp ns Industrial ~ - Industrial ~ - Temperature Range N = Lead Free I = Industrial RoHS (- compliant part ...
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... Alliance against allclaims arising from such use. FEBRUARY/2008, V 1.c 512K X 8 BIT LOW POWER CMOS SRAM Alliance Memory Inc. AS6C2016 Copyright © Alliance Memory All Rights Reserved Page ...