as7c33256ft32a Alliance Memory, Inc, as7c33256ft32a Datasheet

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as7c33256ft32a

Manufacturer Part Number
as7c33256ft32a
Description
3.3v 256k 32/36 Flow-through Synchronous Sram
Manufacturer
Alliance Memory, Inc
Datasheet
November 2004
Features
• Organization: 262,144 words × 32 or 36 bits
• Fast clock to data access: 7.5/8.5/10 ns
• Fast OE access time: 3.5/4.0/4.0 ns
• Fully synchronous flow-through operation
• Asynchronous output enable control
• Available in 100-pin TQFP package
• Individual byte write and global write
Logic block diagram
Selection guide
Minimum cycle time
Maximum clock access time
Maximum operating current
Maximum standby current
Maximum CMOS standby current (DC)
11/30/04, v 1.1
3.3V 256K × 32/36 Flow-through synchronous SRAM
A[17:0]
ADSC
ADSP
GWE
CLK
BWE
ADV
BW
BW
BW
BW
CE0
CE1
CE2
OE
ZZ
a
d
c
b
Power
down
Alliance Semiconductor
18
D
D
CE
CLK
CLK
D
CLK
D
CLK
D
CLK
D
CE
CLK
D
CLK
CLK
CE
CLR
Byte write
Byte write
Byte write
Byte write
registers
registers
registers
registers
register
300
Enable
110
-75
8.5
7.5
Address
register
register
delay
30
Enable
DQ
DQ
DQ
DQ
d
c
b
a
Q
Burst logic
Q
Q
Q
Q
Q
Q
• Multiple chip enables for easy expansion
• 3.3V core power supply
• 2.5V or 3.3V I/O operation with separate VDDQ
• Linear or interleaved burst control
• Snooze mode for reduced power-standby
• Common data inputs and data outputs
LBO
Q0
Q1
18
®
2
16
18
2
CLK
OE
32/36
registers
275
100
-85
Output
8.5
10
30
4
256K × 32/36
Memory
DQ[a:d]
array
32/36
32/36
CLK
registers
Input
Copyright © Alliance Semiconductor. All rights reserved.
AS7C33256FT32A
AS7C33256FT36A
250
-10
10
12
90
30
1 of 19
Units
mA
mA
mA
ns
ns

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as7c33256ft32a Summary of contents

Page 1

... Byte write registers CLK D Q Enable CE register CLK CLK D Q Enable Power delay down register CLK -75 8.5 7.5 300 110 30 Alliance Semiconductor AS7C33256FT32A AS7C33256FT36A 256K × 32/36 Memory array 32/36 32/ Output Input registers registers CLK 32/36 DQ[a:d] -85 -10 Units 10 12 8.5 10 275 250 100 Copyright © ...

Page 2

... PL-SCD PL-SCD PL-SCD PL-DCD PL-DCD PL-DCD NTD-PL NTD-PL NTD-PL NTD-FT NTD-FT NTD- Alliance Semiconductor AS7C33256FT32A AS7C33256FT36A Speed 166/133 MHz 166/133 MHz 166/133 MHz 166/133 MHz 166/133 MHz 166/133 MHz 7.5/8.5/10 ns 7.5/8.5/10 ns 7.5/8.5/10 ns 166/133 MHz 166/133 MHz 166/133 MHz 7.5/8.5/10 ns 7.5/8.5/10 ns 7.5/8.5/ ...

Page 3

... SSQ V 27 DDQ DQP / 11/30/04, v 1.1 ® TQFP 14 × Note: Pins 1, 30, 51, 80 are NC for ×32 Alliance Semiconductor AS7C33256FT32A AS7C33256FT36A DQP / DDQ V 76 SSQ ...

Page 4

... WE signals are sampled on the clock edge that samples ADSC low (and ADSP high). • Master chip enable CE0 blocks ADSP, but not ADSC. The AS7C33256FT32A and AS7C33256FT36A family operates from a core 3.3V power supply. I/Os use a separate power supply that can operate at 2.5V or 3.3V. These devices are available in a 100-pin TQFP. ...

Page 5

... DESELECT or READ cycle should be given while the SRAM is transitioning out of SNOOZE MODE. PUS 11/30/04, v 1.1 ® Description or left floating, device follows interleaved Burst order. When DD is guaranteed after the time t is met. After entering SNOOZE MODE, all inputs except ZZ is SB2 ZZI Alliance Semiconductor AS7C33256FT32A AS7C33256FT36A . The duration of SB2 ...

Page 6

... Address Address Address Address Alliance Semiconductor AS7C33256FT32A AS7C33256FT36A ...

Page 7

... Alliance Semiconductor AS7C33256FT32A AS7C33256FT36A CLK Operation Deselect Deselect Deselect Deselect Deselect External Begin read External Begin read ...

Page 8

... Symbol Min Nominal V 3.135 3 3.135 3.3 DDQ Vss 0 0 Symbol Min Nominal V 3.135 3 2.375 2.5 DDQ Vss 0 0 Alliance Semiconductor AS7C33256FT32A AS7C33256FT36A Min Max Unit –0.5 +4.6 –0 0.5 DD –0 0.5 DDQ – 1.8 – –65 +150 –65 +135 Max Unit 3.465 V 3.465 ...

Page 9

... All V – 0.2V, Deselected < Max IL Deselected < 0.2V, ≤ 0.2V or ≥ V all ≥ V Deselected Max ≤ ≥ V all Alliance Semiconductor AS7C33256FT32A AS7C33256FT36A Min Max Unit -2 2 µA DD < µA DDQ 2 2** V +0.3 DDQ -0 ...

Page 10

... ADSPS t 2.0 – 2.0 ADSCS t 0.5 – 0.5 ADVH t 0.5 – 0.5 ADSPH t 0.5 – 0.5 ADSCH Conditions Symbol ZZ > SB2 t PDS t PUS t ZZI t RZZI Alliance Semiconductor AS7C33256FT32A AS7C33256FT36A –10 Min Max Unit Notes – 12 – ns 8.5 – 4.0 – 4.0 ns – 2.5 – ns 2,3,4 – 2.5 – ns – 0 – ns 2,3,4 4.0 – 4.0 ns 2,3,4 5.0 – ...

Page 11

... ADV inserts wait states t HZOE t OH Q(A2Ý01) Q(A2Ý10) Q(A2Ý11 Read Burst Burst Suspend Burst Q(A2) Read Read Read Read Q(A 2Ý01 ) Q(A 2Ý10 ) Q(A 2Ý10 ) Q(A 2Ý11 ) Alliance Semiconductor AS7C33256FT32A AS7C33256FT36A A3 Q(A3) Q(A3Ý01) Q(A3Ý11) Q(A3Ý10) t HZC Read Burst Burst Burst Q(A3) Read Read Read DSEL Q(A 3Ý01 ) Q(A 3Ý10 ) Q(A 3Ý11 ) Undefined ...

Page 12

... CYC t CL ADSC LOADS NEW ADDRESS A2 ADV SUSPENDS BURST D(A2) D(A2Ý01) D(A2Ý01) Read Suspend ADV Suspend Write Q(A2) Write Burst Write D D(A 2Ý01 ) D(A1) Write D(A 2Ý01 ) Alliance Semiconductor AS7C33256FT32A AS7C33256FT36A t ADSCS t ADSCH ADVS t ADVH D(A2Ý10) D(A2Ý11) D(A3) D(A3Ý01) D(A3Ý10) ADV ADV ...

Page 13

... ADVS t ADVH D(A2 HZOE LZOE Q(A3) Suspend Read Suspend Read Read Q(A2) Write Q(A3) Q(A1) D Alliance Semiconductor AS7C33256FT32A AS7C33256FT36A t OH Q(A3Ý01) Q(A3Ý10) Q(A3Ý11) ADV ADV ADV Suspend Burst Burst Burst Read Read Read Read Q(A 3Ý11 ) Q(A 3Ý01 ) Q(A 3Ý10 ) Q(A 3Ý ...

Page 14

... Din READ READ Q(A1) Q(A2) Note: ADV is don’t care here. 11/30/04, v 1.1 ® t CYC HZOE Q(A3) Q(A4 D(A5) D(A6) D(A7) READ WRITE READ WRITE Q(A3) D(A6) Q(A4) D(A5) Alliance Semiconductor AS7C33256FT32A AS7C33256FT36A A10 Q(A9) Q(A10) D(A8) READ WRITE WRITE READ Q(A10) D(A7) D(A8) Q(A9 ...

Page 15

... OE t LZOE Din Dout Q(A1) t PDS ZZ ZZ Setup Cycle t ZZI I supply READ READ Q(A1) Q(A1Ý01) 11/30/04, v 1.1 ® HZC t PUS ZZ Recovery Cycle t RZZI I SB2 Sleep State Alliance Semiconductor AS7C33256FT32A AS7C33256FT36A t CYC HZOE Q(A2) Q(A2(Ý01)) Normal Operation Mode READ READ Q(A2) Q(A2Ý01 ...

Page 16

... L OUT for 3.3V I/ DDQ for 2.5V I/O Figure B: Output load (A) at any given temperature and voltage. LZC is measured as low if below VIL. CL Alliance Semiconductor AS7C33256FT32A AS7C33256FT36A Thevenin equivalent: +3.3V for 3.3V I/O; /+2.5V for 2.5V I/O 319Ω/1667Ω D OUT 5 pF* 353Ω/1538Ω /2 GND *including scope and jig capacitance ...

Page 17

... Package dimensions 100-pin quad flat pack (TQFP) TQFP Min Max A1 0.05 0.15 A2 1.35 1.45 b 0.22 0.38 c 0.09 0.20 D 13.90 14.10 E 19.90 20.10 e 0.65 nominal Hd 15.85 16.15 He 21.80 22.20 L 0.45 0.75 L1 1.00 nominal α 0° 7° Dimensions in millimeters 11/30/04, v 1.1 ® Alliance Semiconductor AS7C33256FT32A AS7C33256FT36A α ...

Page 18

... Ordering information Package & Width AS7C33256FT32A-75TQC TQFP x32 AS7C33256FT32A-75TQI AS7C33256FT36A-75TQC TQFP x36 AS7C33256FT36A-75TQI Note: Add suffix ‘N’ to the above part number for Lead Free Parts (Ex. AS7C33256FT32A-85TQCN) Part numbering guide AS7C 33 256 1.Alliance Semiconductor SRAM prefix 2.Operating voltage 3.3V 3.Organization: 256 = 256K 4.Flow-through mode 5.Organization ...

Page 19

... Alliance products in such life-supporting systems implies that the manufacturer assumes all risk of such use and agrees to indemnify Alliance against all claims arising from such use. AS7C33256FT32A AS7C33256FT36A ® Copyright © Alliance Semiconductor All Rights Reserved Part Number: AS7C33256FT32A AS7C33256FT36A Document Version: v 1.1 ...

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