as7c513 Alliance Memory, Inc, as7c513 Datasheet

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as7c513

Manufacturer Part Number
as7c513
Description
5v/3.3v 32kx6 Cmos Sram
Manufacturer
Alliance Memory, Inc
Datasheet

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• AS7C513 (5V version)
• AS7C3513 (3.3V version)
• Industrial and commercial temperatur
• Organization: 32,768 words × 16 bits
• Center power and ground pins
• High speed
• Low power consumption: ACTIVE
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Shaded areas indicate advance information.
Maximum address access time
Maximum output enable access time
Maximum operating current
Maximum CMOS standby current
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- 12/15/20 ns address access tim
- 5/7/9 ns output enable access time
- 800 mW (AS7C513) / max @ 12 ns
- 432 mW (AS7C3513) / max @ 12 ns
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WE
UB
OE
CE
LB
I/O8–I/O15
I/O0–I/O7
A0
A1
A2
A3
A4
A5
A6
A7
buffer
I/O
Column decoder
Control circuit
32K × 16
AS7C513
AS7C3513
AS7C513
AS7C3513
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$//,$1&(#6(0,&21'8&725
$//,$1&(#6(0,&21'8&725
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Array
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V
GND
CC
AS7C3513-12
AS7C513-12
160
120
12
5
5
5
• Low power consumption: STANDBY
• 2.0V data retention
• Easy memory expansion with CE, OE inputs
• TTL-compatible, three-state I/O
• 44-pin JEDEC standard package
• ESD protection
• Latch-up current
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- 28 mW (AS7C513) / max CMOS
- 18 mW (AS7C3513) / max CMOS
- 400 mil SOJ
- 400 mil TSOP II
®
AS7C3513-15
AS7C513-15
44-Pin SOJ, TSOP II (400 mil)
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
GND
A14
A13
A12
A11
V
WE
150
110
NC
NC
A3
A2
A1
A0
2000 volts
CE
15
CC
7
5
5
200 mA
Copyright ©1999 Alliance Semiconductor. All rights reserved.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
AS7C3513-20
AS7C513-20
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
V
I/O11
I/O10
I/O9
I/O8
NC
A7
A8
A9
A10
NC
A4
A5
A6
140
100
CC
20
9
5
5
$6:&6846
$6:&6846
$6:&6846
$6:&6846
7:
7:
7:
7:
$6:&846
$6:&846
$6:&846
$6:&846
Unit
mA
mA
mA
mA
ns
ns

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as7c513 Summary of contents

Page 1

... Industrial and commercial temperatur • Organization: 32,768 words × 16 bits • Center power and ground pins • High speed - 12/15/20 ns address access tim - 5/7/9 ns output enable access time • Low power consumption: ACTIVE - 800 mW (AS7C513) / max @ 432 mW (AS7C3513) / max @ 12 ns /RJLF#EORFN#GLDJUDP 32K × 16 ...

Page 2

... The chip enable input CE permits easy memory expansion with multiple-bank memory systems When CE is high, the devices enter standby mode. The AS7C513 and AS7C3513 are guaranteed not to exceed 28/18 mW power consumption in CMOS standby mode. The devices also offer 2.0V data retention. ...

Page 3

... GND Max = GND AS7C513 = Max 0mA AS7C3513 Max OUT AS7C513 = Max 0mA AS7C3513 Max OUT AS7C513 Max –0.2V CC GND + 0.2V or AS7C3513 V –0.2V mA Min CC = –4 mA Min CC R #&/#9 # #120,1$/, 2 && Symbol ...

Page 4

Parameter Read cycle time Address access time Chip enable (CE) access time Output enable (OE) access time Output hold from address change CE Low to output in low Z CE High ...

Page 5

Parameter Write cycle time Chip enable (CE) to write end Address setup to write end Address setup time Write pulse width Address hold from end of write Data valid to write end Data hold time ...

Page 6

Parameter V for data retention CC Data retention current Chip deselect to data retention time Operation recovery time Input leakage current 'DWD#UHWHQWLRQ#ZDYHIRUP $&#WHVW#FRQGLWLRQV - Output load: see Figure ...

Page 7

Normalized supply current vs. supply voltage V CC 1.4 1 1.0 0.8 0 0.4 0.2 0.0 MIN NOMINAL MAX Supply voltage (V) Normalized access time t ...

Page 8

... B 0.026 0.032 b 0.015 0.020 c 0.007 0.013 D 1.120 1.130 E 0.370 NOM E1 0.395 0.405 E2 0.435 0.445 e 0.050 NOM AS7C513-15JC AS7C513-20JC AS7C3513-15JC AS7C3513-20JC AS7C513-15TC AS7C513-20TC AS7C3513-15TC AS7C3513-20TC C Commercial temperature range, 0° °C ','#440533440$1#425;233 ','#440533440$1#425;233 ','#440533440$1#425;233 ','#440533440$1#425;233 ...

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