bs62lv2565pi Brillance Semiconductor, bs62lv2565pi Datasheet

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bs62lv2565pi

Manufacturer Part Number
bs62lv2565pi
Description
Very Power/voltage Cmos Sram
Manufacturer
Brillance Semiconductor
Datasheet
1.BS62LV2565PI.pdf (11 pages)
R0201-BS62LV2565
• Wide Vcc operation voltage : 4.5V ~ 5.5V
• Very low power consumption :
• High speed access time :
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
PIN CONFIGURATIONS
Brilliance Semiconductor Inc
BS62LV2565SC
BS62LV2565TC
BS62LV2565PC
BS62LV2565JC
BS62LV2565DC
BS62LV2565SI
BS62LV2565TI
BS62LV2565PI
BS62LV2565JI
BS62LV2565DI
FEATURES
PRODUCT FAMILY
Vcc = 5.0V
-55
-70
PRODUCT
FAMILY
VCC
A11
A13
A14
A12
WE
OE
A9
A8
A7
A6
A5
A4
A3
BSI
55ns (Max.) = 5.0V
70ns (Max.) = 5.0V
1
2
3
4
5
6
7
8
9
10
11
12
13
14
GND
DQ0
DQ1
DQ2
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
0.4uA (Typ.) CMOS standby current
C-grade : 35mA (Max.) operating current
I- grade : 40mA (Max.) operating current
1
2
3
4
5
6
7
8
9
10
11
12
13
14
BS62LV2565TC
BS62LV2565TI
TEMPERATURE
-40
BS62LV2565SC
BS62LV2565SI
BS62LV2565PC
BS62LV2565PI
BS62LV2565JC
BS62LV2565JI
0
OPERATING
O
O
C to +70
C to +85
Very Low Power/Voltage CMOS SRAM
32K X 8 bit
28
27
26
25
24
23
22
21
20
19
18
17
16
15
O
VC
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
O
C
C
C
28
27
26
25
24
23
22
21
20
19
18
17
16
15
. reserves the right to modify document contents without notice.
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
4.5V ~ 5.5V
4.5V ~ 5.5V
RANGE
Vcc
SPEED
Vcc=5.0V
55 / 70
55 / 70
(ns)
The BS62LV2565 is a high performance, very low power CMOS
Static Random Access Memory organized as 32,768 words by 8 bits
and operates from a wide range of 4.5V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.4uA and maximum access time of 55ns in 5V operation.
Easy memory expansion is provided by an active LOW chip
enable (CE), and active LOW output enable (OE) and three-state
output drivers.
The BS62LV2565 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV2565
8mmx13.4mm TSOP (normal type).
1
330mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP and
DESCRIPTION
BLOCK DIAGRAM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
A12
A14
A13
A11
Vdd
Gnd
WE
OE
A5
A6
A7
A8
A9
CE
Address
Buffer
Input
(I
STANDBY
CCSB1
8
Control
Vcc=5.0V
8
1.0uA
2.0uA
POWER DISSIPATION
is available in the JEDEC standard 28 pin
, Max)
18
Output
Buffer
Buffer
Data
Input
Data
Decoder
Row
8
512
Operating
BS62LV2565
8
(I
Vcc=5.0V
CC
35mA
40mA
, Max)
A4
Address Input Buffer
Column Decoder
A3 A2 A1 A0 A10
Memory Array
Sense Amp
Write Driver
Column I/O
512 x 512
512
64
12
Revision 2.2
April 2001
SOP-28
TSOP-28
PDIP-28
SOJ-28
DICE
SOP-28
TSOP-28
PDIP-28
SOJ-28
DICE
TYPE
PKG

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bs62lv2565pi Summary of contents

Page 1

... BS62LV2565TI O - +85 BS62LV2565PI BS62LV2565JI BS62LV2565DI PIN CONFIGURATIONS A14 1 28 A12 BS62LV2565SC BS62LV2565SI BS62LV2565PC BS62LV2565PI BS62LV2565JC BS62LV2565JI DQ0 11 18 DQ1 12 17 DQ2 13 16 GND A11 A13 ...

Page 2

BSI PIN DESCRIPTIONS Name A0-A14 Address Input CE Chip Enable Input WE Write Enable Input OE Output Enable Input DQ0-DQ7 Data Input/Output Ports Vcc Gnd TRUTH TABLE MODE WE Not selected X Output Disabled H Read H Write L ABSOLUTE ...

Page 3

BSI DC ELECTRICAL CHARACTERISTICS PARAMETER PARAMETER NAME Guaranteed Input Low V IL (2) Voltage Guaranteed Input High V IH (2) Voltage I Input Leakage Current IL I Output Leakage Current OL V Output Low Voltage OL V Output High Voltage ...

Page 4

BSI AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level AC TEST LOADS AND WAVEFORMS Ω 1928 5.0V OUTPUT 100PF INCLUDING Ω 1020 JIG AND SCOPE FIGURE 1A THEVENIN EQUIVALENT 667 OUTPUT ...

Page 5

BSI SWITCHING WAVEFORMS (READ CYCLE) (1,2,4) READ CYCLE1 ADDRESS D OUT (1,3,4) READ CYCLE2 CE D OUT (1,4) READ CYCLE3 ADDRESS OUT NOTES high in read Cycle. 2. Device is continuously selected when CE ...

Page 6

BSI AC ELECTRICAL CHARACTERISTICS WRITE CYCLE JEDEC PARAMETER PARAMETER NAME NAME t t AVAX E1LWH AVWL AVWH WLWH WHAX WLOZ WHZ t ...

Page 7

BSI (1,6) WRITE CYCLE2 ADDRESS OUT D IN NOTES must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE and WE low. All signals ...

Page 8

BSI ORDERING INFORMATION BS62LV2565 PACKAGE DIMENSIONS PACKAGE DIMENSIONS SOP - 28 R0201-BS62LV2565 0.020 0.005X45 b WITH PLATING BASE METAL 8 BS62LV2565 SPEED 55 : 55ns 70: 70ns GRADE +70 ...

Page 9

BSI PACKAGE DIMENSIONS (continued TSOP - 28 PDIP - 28 R0201-BS62LV2565 R0201-BS62LV2565 12 (2x) 12 (2x Seating Plane 15 12 (2X) "A" SEATING PLANE 15 12 (2X) L ...

Page 10

BSI PACKAGE DIMENSIONS (continued) SOJ - 28 R0201-BS62LV2565 10 BS62LV2565 Revision 2.2 April 2001 ...

Page 11

BSI REVISION HISTORY Revision Description 2.2 2001 Data Sheet release R0201-BS62LV2565 Date Apr. 15, 2001 11 BS62LV2565 Note Revision 2.2 April 2001 ...

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