bs62uv4000 Brillance Semiconductor, bs62uv4000 Datasheet - Page 5

no-image

bs62uv4000

Manufacturer Part Number
bs62uv4000
Description
Ultra Power/voltage Cmos Sram 512k
Manufacturer
Brillance Semiconductor
Datasheet
R0201-BS62UV4000
READ CYCLE1
READ CYCLE2
READ CYCLE3
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE = V
3. Address valid prior to or coincident with CE transition low.
4. OE = V
5. Transition is measured
SWITCHING WAVEFORMS (READ CYCLE)
The parameter is guaranteed but not 100% tested.
ADDRESS
OE
CE
D
CE
D
ADDRESS
D
BSI
OUT
OUT
OUT
IL
.
(1,2,4)
(1,3,4)
(1,4)
±
500mV from steady state with C
t
CLZ
(5)
IL
t
.
OH
t
t
ACS
CLZ
t
(5)
AA
t
ACS
t
L
5
t
AA
= 5pF as shown in Figure 1B.
OLZ
t
t
t
OE
RC
RC
t
t
t
BS62UV4000
OHZ
CHZ
CHZ
(1,5)
(5)
t
(5)
t
OH
OH
Revision 2.4
April 2002

Related parts for bs62uv4000