lx1214e500x NXP Semiconductors, lx1214e500x Datasheet - Page 2

• Manufacturer Part Number: lx1214e500x
• Description: Npn Microwave Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
Intended for use in common emitter,
class AB amplifiers in CW conditions
for professional applications between
1.2 and 1.4 GHz.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package, with emitter connected to
flange.
1997 Feb 18
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
Interdigitated structure provides
high emitter efficiency
Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
Multicell geometry gives good
balance of dissipated power and
low thermal resistance
Internal input and output
prematching ensures a good
stability and allows an easier
design of wideband circuits.
NPN microwave power transistor
QUICK REFERENCE DATA
Microwave performance up to T
PINNING - SOT439A
OPERATION
handbook, 4 columns
MODE OF
Class AB
(CW)
PIN
1
2
3
WARNING
3
1.2 to 1.4
collector
base
emitter connected to flange
Top view
(GHz)
2
f
Fig.1 Simplified outline and symbol.
V
(V)
24
CE
mb
1
2
0.15 typ. 50 typ. 11 typ. 50 see Figs 6
= 25 C in a common emitter class AB.
I
(A)
CQ
DESCRIPTION
(W)
P
3
L1
MAM045
(dB)
G
Preliminary specification
po
LX1214E500X
b
(%)
C
c
e
Z
and 7
( )
i
; Z
L