lx1214e500x NXP Semiconductors, lx1214e500x Datasheet - Page 3

• Manufacturer Part Number: lx1214e500x
• Description: Npn Microwave Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Up to 0.2 mm from ceramic.
1997 Feb 18
V
V
V
V
I
P
P
T
T
T
handbook, halfpage
C
SYMBOL
stg
j
sld
CBO
CER
CEO
EBO
i
tot
NPN microwave power transistor
T
(1) Region of permissible DC operation.
mb
10
(A)
I C
10
1
75 C.
1
1
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
input power
total power dissipation
storage temperature
junction temperature
soldering temperature
Fig.2 DC SOAR.
PARAMETER
10
I
V
CE
(V)
MLC436
10
2
open emitter
R
open base
open collector
f = 1.2 to 1.4 GHz; V
T
t
mb
BE
10 s; note 1
= 75 C
= 220
3
handbook, halfpage
CONDITIONS
P tot
(W)
80
60
40
20
0
CC
0
= 24 V; class AB
Fig.3 Power derating curve.
50
100
65
MIN.
Preliminary specification
LX1214E500X
150
45
30
25
3
9
7
70
+200
200
235
T
MAX.
mb
MLC437
( C)
o
200
V
V
V
V
A
W
W
C
C
C
UNIT