uaa3522hl NXP Semiconductors, uaa3522hl Datasheet - Page 14

• Manufacturer Part Number: uaa3522hl
• Description: Low Power Dual-band Gsm Transceiver With An Image Rejecting Front-end
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2000 Aug 15
IR
G
Receiver IF section (AGC and baseband filter); the impedance of the source, input balun, matching network
and specified input is 50
IF
f
R
P
B
G
G
G
G
F
IP
CP1
CP1
B
i(IF)
G
t
i(m)
ASEBAND INPUT
bf(-1dB)
i(dif)
Low power dual-band GSM transceiver
with an image rejecting front-end
off
conv(dif)(min)
conv(dif)(max)
conv(step)
L
d(g)
3
INPUT TO
SYMBOL
I-Q
adjacent
AGC
/
OUTPUT
image rejection
output isolation in
off-state
IF input frequency
differential input
resistance
input power matching
differential voltage
conversion gain per
channel; gain set to
minimum
differential voltage
conversion gain per
channel; gain set to
maximum
voltage conversion step
gain
gain difference
between I and Q paths
quadrature-phase error
between I and Q paths
gain control linearity
noise figure
third-order intercept
point referenced to
input
point referenced to
input
point for adjacent
channels referenced to
input
bandwidth
group delay variation
AMPLIFIER
1 dB compression
1 dB compression
1 dB baseband filter
PARAMETER
; RX
(
PINS
MODE
RXIIFA
(
PINS
AND
IA, IB, QA
f
bit LNA = 0; notes 1 and 5
note 1
notes 1 and 7
notes 1 and 7
note 1
note 1
note 1
notes 1 and 11
within any 20 dB gain range
G
G
G
G
G
note 10
DC < f
o(IF)
f
conv(dif)(max)
conv(dif)(min)
conv(dif)(max)
conv(dif)(min)
conv
mod
RXIIFB)
= 200 MHz; note 1
= 49 dB; notes 6 and 7
= n
mod
AND
CONDITIONS
200 kHz; n = 1, 2 and 3
< 67.7 kHz
; notes 1 and 9
; note 8
; notes 1 and 9
= 61 dB; note 8
QB)
14
30
60
59.5
67.7
MIN.
2.5
5
2
3
1
42
4
45
35
70
200
1
61.5
2
0
1.5
TYP.
15
0.5
38
40
Preliminary specification
+1.5
63.5
0.8
+5
+2
+3
+1
9
61
10
UAA3522HL
MAX.
dB
dB
MHz
k
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dB
dBm
dBm
dBm
kHz
UNIT
S