s71jl064ha0bfw62 Advanced Micro Devices, s71jl064ha0bfw62 Datasheet - Page 109
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s71jl064ha0bfw62
Manufacturer Part Number
s71jl064ha0bfw62
Description
Stacked Multi-chip Product Mcp Flash Memory And Psram Cmos 3.0volt-only, Simultaneous Operation Flash Memories And Static Ram/pseudo-static Ram
Manufacturer
Advanced Micro Devices
Datasheet
1.S71JL064HA0BFW62.pdf
(141 pages)
- Current page: 109 of 141
- Download datasheet (4Mb)
Operation Mode
Note: X=don’t care. H=logic high. L=logic low.
Absolute Maxumum Ratings (see Note)
Note: Absolute maximum DC requirements contains stress ratings only. Functional operation at the absolute maximum
limits is not implied or guaranteed. Extended exposure to maximum ratings may affect device reliability.
DC Characteristics
Notes:
1. Overshoot: V
2. Undershoot: -2.0V in case of pulse width
3. Overshoot and undershoot are sampled, not 100% tested.
February 25, 2004 S71JLxxxHxx_00A1
SYMBOL
Lower Byte Write
Upper Byte Write
Lower Byte Read
Upper Byte Read
Output Disabled
Output Disabled
V
V
V
V
Word Write
DD
Word Read
SS
IH
IL
Deselect
Deselect
Deselect
MODE
V
SYMBOL
IN
V
V
I
, V
P
SH
CC
IN
D
OUT
CC
+ 2.0V in case of pulse width
Power Supply Voltage
Input High Voltage
Input Low Voltage
CE1#
PARAMETER
H
X
L
L
L
L
L
L
L
L
L
Ground
Table 16. DC Recommended Operating Conditions
CE2
Output and output Voltages
Output short circuit current
H
H
H
H
H
H
H
H
H
H
L
P r e l i m i n a r y
Power Dissipation
Input Voltages
OE#
Supply Voltage
X
X
X
H
H
X
X
X
L
L
L
RATING
≤
16 Mb pSRAM (supplier 4)
20ns
WE#
≤
X
X
X
H
H
H
H
H
L
L
L
20ns
-0.2
LB#
H
H
H
X
X
X
L
L
L
L
L
MIN
(Note
2.7
2.2
0
UB#
H
H
H
X
X
X
L
L
L
L
L
2)
DQ0 to DQ7
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
-0.2 to V
D-out
D-out
D-in
D-in
-0.2 to +3.6
-2.0 to +3.6
VALUE
TYP.
3.0
100
-
-
-
1
CC
+ 0.3
DQ8 to DQ15
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
D-out
D-out
D-in
D-in
V
CC
+ 0.2
MAX
+0.6
3.3
Deep Power Down
0
(Note
Standby
Standby
POWER
UNIT
Active
Active
Active
Active
Active
Active
Active
Active
mA
W
V
V
V
1)
UNIT
V
97
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