k4t51043qb-gce6 Samsung Semiconductor, Inc., k4t51043qb-gce6 Datasheet - Page 19

no-image

k4t51043qb-gce6

Manufacturer Part Number
k4t51043qb-gce6
Description
512mb B-die Ddr2 Sdram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
512Mb B-die DDR2 SDRAM
Differential input AC logic Level
1. V
UDQS.
2. V
or UDQS) level and V
IL(DC)
Notes:
1. V
LDQS or UDQS) and V
- V
2. The typical value of V
VDDQ . V
Differential AC output parameters
Notes:
1. The typical value of V
in VDDQ . V
Symbol
Symbol
IL(AC)
V
V
V
IN(DC)
ID(DC
ID(AC)
.
OX
ID
IX
(ac)
(ac)
(ac)
.
) specifies the input differential voltage |V
specifies the input differential voltage |V
specifies the allowable DC execution of each input of differential pair such as CK, CK, DQS, DQS, LDQS, LDQS, UDQS and
IX(AC)
OX(AC)
ac differential input voltage
ac differential cross point voltage
ac differential cross point voltage
indicates the voltage at which differential input signals must cross.
indicates the voltage at whitch differential output signals must cross.
CP
CP
IX(AC)
OX(AC)
is the complementary input (such as CK, DQS, LDQS or UDQS) level. The minimum value is equal to V
is the complementary input signal (such as CK, DQS, LDQS or UDQS). The minimum value is equal to V
Parameter
Parameter
V
is expected to be about 0.5 * VDDQ of the transmitting device and V
V
is expected to be about 0.5 * V DDQ of the transmitting device and V
CP
TR
TR
TR
< Differential signal levels >
-V
-V
CP
CP
0.5 * VDDQ - 0.175
0.5 * VDDQ - 0.125
| required for switching, where V
| required for switching, where V
Page 19 of 38
V
V
Min.
Min.
0.5
DDQ
SSQ
V
ID
0.5 * VDDQ + 0.175
0.5 * VDDQ + 0.125
V
DDQ
Max.
Max.
+ 0.6
V
TR
TR
IX or
is the true input signal (such as CK, DQS,
is the true input (such as CK, DQS, LDQS
Crossing point
IX(AC)
V
OX(AC
OX
Units
Units
V
V
V
is expected to track variations in
) is expected to track variations
Rev. 0.91 (Sep. 2003)
DDR2 SDRAM
Notes
Notes
1
2
1
Preliminary
IH(DC)
IH(AC)
- V

Related parts for k4t51043qb-gce6