k4t51043qb-gce6 Samsung Semiconductor, Inc., k4t51043qb-gce6 Datasheet - Page 37

no-image

k4t51043qb-gce6

Manufacturer Part Number
k4t51043qb-gce6
Description
512mb B-die Ddr2 Sdram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
512Mb B-die DDR2 SDRAM
18. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for
this parameter, but system performance (bus turnaround) will degrade accordingly.
19. MIN ( t CL, t CH) refers to the smaller of the actual clock low time and the actual clock high time as pro-
vided to the device (i.e. this value can be greater than the minimum specification limits for t CL and t CH). For
example, t CL and t CH are = 50% of the period, less the half period jitter ( t JIT(HP)) of the clock source, and
less the half period jitter due to crosstalk ( t JIT(crosstalk)) into the clock traces.
20. t QH = t HP – t QHS, where:
21. tDQSQ: Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the
output drivers for any given cycle.
22. t DAL = (nWR) + ( tRP/tCK):
For each of the terms above, if not already an integer, round to the next highest integer. tCK refers to the
application clock period. nWR refers to the t WR parameter stored in the MRS.
Example: For DDR533 at t CK = 3.75 ns with t WR programmed to 4 clocks. tDAL = 4 + (15 ns / 3.75 ns)
clocks =4 +(4)clocks=8clocks.
23. The clock frequency is allowed to change during self–refresh mode or precharge power-down mode. In
case of clock frequency change during precharge power-down, a specific procedure is required as described
in section 3.2.9.
tHP = minimum half clock period for any given cycle and is defined by clock high or clock low ( tCH, tCL).
tQHS accounts for:
1) The pulse duration distortion of on-chip clock circuits; and
2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the
CK
CK
next transition, both of which are, separately, due to data pin skew and output pattern effects, and p-
channel to n-channel variation of the output drivers.
tIS
tIH
Page 37 of 38
tIS
tIH
Rev. 0.91 (Sep. 2003)
DDR2 SDRAM
Preliminary
V
V
V
V
V
V
V
DDQ
IH(ac)
IH(dc)
REF
IL(dc)
IL(ac)
SS
max
max
min
min

Related parts for k4t51043qb-gce6