k4t51043qb-gce6 Samsung Semiconductor, Inc., k4t51043qb-gce6 Datasheet - Page 20

• Manufacturer Part Number: k4t51043qb-gce6
• Description: 512mb B-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

512Mb B-die DDR2 SDRAM
Input Signal Overshoot/Undershoot Specification
AC Overshoot/Undershoot Specification for Address and Control Pins A0-A15, BA0-BA2, CS, RAS,
CAS, WE, CKE, ODT
AC Overshoot/Undershoot Specification for Clock, Data, Strobe, and Mask Pins DQ, DQS, DM, CK,
CK
Parameter
Maximum peak amplitude allowed for overshoot area (See Figure 2):
Maximum peak amplitude allowed for undershoot area (See Figure 2):
Maximum overshoot area above VDDQ (See Figure 2).
Maximum undershoot area below VSSQ (See Figure 2).
Parameter
Maximum peak amplitude allowed for overshoot area (See Figure 1):
Maximum peak amplitude allowed for undershoot area (See Figure 1):
Maximum overshoot area above VDD (See Figure1).
Maximum undershoot area below VSS (See Figure 1).
Volts
(V)
Volts
(V)
V
V
DD
SS
V
V
DDQ
SSQ
AC Overshoot and Undershoot Definition for Clock, Data, Strobe, and Mask Pins
AC Overshoot and Undershoot Definition for Address and Control Pins
Maximum Amplitude
Maximum Amplitude
Maximum Amplitude
Maximum Amplitude
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Time (ns)
Time (ns)
DDR2-400
DDR2-400
0.38 V-ns
0.38 V-ns
0.75 V-ns
0.75 V-ns
0.9V
0.9V
0.9V
0.9V
Undershoot Area
Undershoot Area
Overshoot Area
Overshoot Area
Specification
Specification
DDR2-533
DDR2-533
0.28 V-ns
0.28 V-ns
0.56 V-ns
0.56 V-ns
0.9V
0.9V
0.9V
0.9V
Rev. 0.91 (Sep. 2003)
DDR2 SDRAM
Preliminary
DDR2-667
DDR2-667
0.23 V-ns
0.45 V-ns
0.45 V-ns
0.23 V-ns
0.9V
0.9V
0.9V
0.9V