ic42s32200 ETC-unknow, ic42s32200 Datasheet - Page 14
![no-image](/images/no-image-200.jpg)
ic42s32200
Manufacturer Part Number
ic42s32200
Description
512k X 32 Bit X 4 Banks 64-mbit Sdram
Manufacturer
ETC-unknow
Datasheet
1.IC42S32200.pdf
(62 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ic42s32200-6T
Manufacturer:
ESS
Quantity:
78
Part Number:
ic42s32200-6TG
Manufacturer:
ICSI
Quantity:
20 000
Company:
Part Number:
ic42s32200-7BG
Manufacturer:
PANASINIC
Quantity:
319
Part Number:
ic42s32200-7BG
Manufacturer:
ICSI
Quantity:
20 000
Company:
Part Number:
ic42s32200-7T
Manufacturer:
ICSI
Quantity:
3 000
Company:
Part Number:
ic42s32200-7T
Manufacturer:
ICSI
Quantity:
3 000
Company:
Part Number:
ic42s32200-7T
Manufacturer:
LAT
Quantity:
5 380
IC42S32200
IC42S32200L
14
· Interrupted by a WRITE (with or without auto precharge): A WRITE to bank m will interrupt a WRITE on bank
WRITE with Auto Precharge
· Interrupted by a READ (with or without auto precharge): A READ to bank m will interrupt a WRITE on bank n
n when registered. The PRECHARGE to bank n will begin after t WR is met, where t WR begins when the WRITE
to bank m is registered. The last valid data WRITE to bank n will be data registered one clock prior to a WRITE
to bank m.
when registered, with the data-out ap- pearing CAS latency later. The PRECHARGE to bank n will begin after
t WR is met, where t WR begins when the READ to bank m is registered. The last valid WRITE to bank n will
be data-in registered one clock prior to the READ to bank m.
Internal
States
Internal
States
NOTE: 1. DQM is LOW.
NOTE: 1. DQM is LOW.
WRITE With Auto Precharge Interrupted by a WRITE
WRITE With Auto Precharge Interrupted by a READ
COMMAND
ADDRESS
COMMAND
BANK m
BANK n
ADDRESS
BANK m
BANK n
CLK
DQ
Page Active
NOP
T0
Page Active
T0
NOP
WRITE - AP
BANK n,
Page Active
BANK n
COL a
T1
D
WRITE - AP
a
IN
BANK n,
WRITE with Burst of 4
Page Active
BANK n
COL a
T1
D
a
IN
WRITE with Burst of 4
T2
a + 1
D
NOP
IN
T2
a + 1
D
NOP
IN
a + 2
T3
D
IN
BANK m,
READ - AP
T3
COL d
BANK m
Interrupt Burst, Write-Back
t
CAS Latency = 3 (BANK m)
WR - BANK n
READ with Burst of 4
BANK m,
WRITE - AP
COL d
BANK m
T4
D
Interrupt Burst, Write-Back
d
t
IN
WR - BANK n
T4
WRITE with Burst of 4
NOP
T5
d + 1
NOP
D
T5
IN
NOP
Precharge
t
RP - BANK n
Integrated Circuit Solution Inc.
T6
d + 2
NOP
Precharge
D
t RP - BANK n
IN
T6
D
NOP
OUT
d
DON’T CARE
DON’T CARE
T7
d + 3
NOP
D
t WR - BANK m
IN
Write-Back
T7
d + 1
D
NOP
t RP - BANK m
OUT
DR036-0D 02/04/2005