ic42s32800 ETC-unknow, ic42s32800 Datasheet - Page 2

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ic42s32800

Manufacturer Part Number
ic42s32800
Description
2m X 32 Bit X 4 Banks 256-mbit Sdram
Manufacturer
ETC-unknow
Datasheet
IC42S32800
IC42S32800L
2M Words x 32 Bits x 4 Banks (256-MBIT)
SYNCHRONOUS DYNAMIC RAM
FEATURES
· Concurrent auto precharge
· Clock rate:166/143 MHz
· Fully synchronous operation
· Internal pipelined architecture
· Four internal banks (2M x 32bit x 4bank)
· Programmable Mode
· Burst stop function
· Individual byte controlled by DQM0-3
· Auto Refresh and Self Refresh
· 4096 refresh cycles/64ms (15.6 s/row)
· Single +3.3V ±0.3V power supply
· Interface:LVTTL
· Package: 86 Pin TSOP-2,0.50mm Pin Pitch
· Pb-free package is available.
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
2
-CAS#Latency:2 or 3
-Burst Length:1,2,4,8,or full page
-Burst Type:interleaved or linear burst
-Burst-Read-Single-Write
8x13mm, 90 Ball BGA, Ball pitch 0.8mm
DESCRIPTION
The ICSI IC42S32800 and IC42S32800L is a high-speed
CMOS configured as a quad 2M x 32 DRAM with a
synchronous interface (all signals are registered on the
positive edge of the clock signal,CLK).
Each of the 2M x 32 bit banks is organized as 4096 rows
by 512 columns by 32 bits.Read and write accesses start
at a selected locations in a programmed sequence.
Accesses begin with the registration of a BankActive
command which is then followed by a Read or Write
command
The ICSI IC42S32800 and IC42S32800L provides for
programmable Read or Write burst lengths of 1,2,4,8,or
full page, with a burst termination operation. An auto
precharge function may be enable to provide a self-timed
row precharge that is initiated at the end of the burst
sequence.The refresh functions,either Auto or Self
Refresh are easy to use.
By having a programmable mode register,the system
can choose the most suitable modes to maximize its
performance.
These devices are well suited for applications requiring
high memory bandwidth.
Integrated Circuit Solution Inc.
DR046-0B 12/21/2004

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