saa4998h NXP Semiconductors, saa4998h Datasheet - Page 29

• Manufacturer Part Number: saa4998h
• Description: Field And Line Rate Converter With Noise Reduction And Embedded Memory
• Manufacturer: NXP Semiconductors

Philips Semiconductors
Notes
1. S means semi static, used at initialization or mode changes; F means field frequent, in general updated in each
2. Selectable items are marked bold.
3. Almost all of the R(ead) and W(rite) registers of SAA4998H are double buffered. The write registers are latched by
8
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Only valid, if V
2. In accordance with “Transient energy (ESD machine model); SNW-FQ-302B” class C, discharging a 200 pF
3. In accordance with “Transient energy (ESD human body model); SNW-FQ-302A” class 2, discharging a 100 pF
9
2004 Feb 18
V
V
V
V
V
V
V
I
T
T
V
R
R
o
SYMBOL
SYMBOL
stg
j
DDD
DDA
DDM
DDS
DDE
DDP
i
esd
th(j-a)
th(j-c)
Field and line rate converter with noise
reduction and embedded memory
display field.
a signal called New_field. New_field gets set, when REF rises after SNRST (New_field is effectively at the start of
active video). The read registers are latched by a signal called Reg_upd. Reg_upd gets set, when half the number
of active pixels of the fourth line of vertical blanking have entered the SAA4998H (Reg_upd will effectively be
active 3
are as follows:
a) Write register 025H: power_on_reset
b) Write register 02FH, bit 1: CndSet
c) Read register 0B0H to 0BFH, 0AEH and 0AFH: pan_zoom_vectors, including FalconIdent (= 0), StatusJump0
capacitor via a 0.75 H series inductance.
capacitor via a 1.5 k series resistor.
LIMITING VALUES
THERMAL CHARACTERISTICS
and StatusJump1.
1
2
core supply voltage (internal rail)
analog supply voltage
field memory supply voltage
SRAM supply voltage
external supply voltage (output pads)
high supply voltage of internal field memories
input voltage of all I/O pins
output current
storage temperature
junction temperature
electrostatic discharge voltage on all pins
thermal resistance from junction to ambient
thermal resistance from junction to case
lines after the REA has ended). The only exception are the registers which are not double buffered, these
DDE
is present.
PARAMETER
PARAMETER
29
MM; note 2
HBM; note 3
in free air
CONDITIONS
CONDITIONS
0
0.5
0.5
0.5
40
400
3000
MIN.
VALUE
45
10
+2.5
+4.6
+6
4
+125
125
+400
+3000
MAX.
(1)
Product specification
SAA4998H
UNIT
V
V
V
mA
V
V
K/W
K/W
C
C
UNIT