mt16vddf6464hy-40b Micron Semiconductor Products, mt16vddf6464hy-40b Datasheet - Page 9

• Manufacturer Part Number: mt16vddf6464hy-40b
• Description: 512mb, 1gb X64, Dr Pc3200 200-pin Ddr Sodimm
• Manufacturer: Micron Semiconductor Products

Table 9:
Table 10:
PDF: 09005aef80b57837/Source: 09005aef80b577fa
DDAF16C64_128x64H.fm - Rev. E 10/06 EN
Parameter/Condition
Operating current: One device bank; Active-Precharge;
(MIN); DQ, DM and DQS inputs changing once per clock cycle; Address and control
inputs changing once every two clock cycles
Operating current: One device bank; Active-Read-Precharge; Burst = 4;
(MIN);
clock cycle
Precharge power-down standby current: All device banks idle; Power-down
mode;
Idle standby current: CS# = HIGH; All device banks are idle;
HIGH; Address and other control inputs changing once per clock
DQ, DQS, and DM
Active power-down standby current: One device bank active; Power-down
mode;
Active standby current: CS# = HIGH; CKE = HIGH;
t
Address and other control inputs changing once per clock cycle
Operating current: Burst = 2;
Address and control inputs changing once per clock cycle;
Operating current: Burst = 2; Writes; Continuous burst; One device bank
Address and control inputs changing once per clock cycle;
DQS inputs changing twice per clock cycle
Auto refresh burst current:
Self refresh current: CKE ≤ 0.2V
Operating current: Four device bank interleaving READs
precharge,
change only during Active READ, or WRITE commands
Parameter/Condition
Input high (logic 1) voltage
Input low (logic 0) voltage
I/O reference voltage
RAS (MAX);
t
t
t
CK =
CK =
CK =
t
RC = minimum
t
t
t
t
CK =
AC Input Operating Conditions
0°C ≤ T
I
0°C ≤ T
CK (MIN); CKE = LOW
CK (MIN); I
CK (MIN);
DD
Specifications and Conditions – 512MB
t
Notes:
CK (MIN); DQ, DM and DQS inputs changing twice per clock cycle;
A
A
≤ +70°C; V
≤ +70°C; V
CKE = (LOW)
OUT
t
RC allowed;
1. a: Value calculated as one module rank in this operating condition; all other module ranks
= 0mA; Address and control inputs
are calculated in I
b: Value calculated reflects all module ranks in this operating condition.
DD
DD
Reads; Continuous burst; One device bank active;
, V
= V
DD
DD
t
Q = +2.6V ±0.1V
CK =
Q = +2.6V ±0.1V
t
CK (MIN); Address and control inputs
DD
512MB, 1GB: (x64, DR) PC3200 200-Pin DDR SODIMM
2
P
(CKE LOW) mode
One device bank active
t
t
CK =
CK =
t
9
RC =
(Burst = 4) with auto
t
t
t
CK (MIN); DQ, DM, and
cycle. V
CK (MIN);
CK =
t
t
t
changing once per
REFC =
REFC = 7.8125µs
RC (MIN);
V
Symbol
V
V
REF
IH
IL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
(AC)
CK (MIN);
(AC)
(AC)
IN
t
RFC (MIN)
= V
I
OUT
t
t
RC =
;
REF
CK =
active;
t
= 0mA
RC =
V
0.49 × V
CKE =
for
REF
t
t
RC
CK
Min
+ 0.310
–
Electrical Specifications
DD
Symbol
I
I
I
I
I
I
I
I
DD5A
I
DD4W
I
DD3N
I
I
DD2P
DD3P
DD4R
DD2F
Q
DD5
DD6
DD7
DD0
DD1
©2004 Micron Technology, Inc. All rights reserved.
a
a
b
b
a
b
b
b
b
a
a
b
0.49 × V
V
REF
Max
- 0.310
–
1,112
1,392
1,120
1,632
1,592
4,160
3,792
Max
-40B
960
640
64
96
64
DD
Q
Units
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V