m470t2953bs0-cd5cc Samsung Semiconductor, Inc., m470t2953bs0-cd5cc Datasheet - Page 11

• Manufacturer Part Number: m470t2953bs0-cd5cc
• Description: 200pin Unbuffered Sodimm Based 512mb B-die 64bit Non-ecc
• Manufacturer: Samsung Semiconductor, Inc.

Operating Current Table(1-1)
M470T6554BG(Z)3/M470T6554BG(Z)0 : 64Mx64 512MB Module
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
M470T3354BG(Z)3/M470T3354BG(Z)0 : 32Mx64 256MB Module
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
256MB, 512MB, 1GB Unbuffered SODIMMs
IDD3P-S
IDD3P-S
IDD3P-F
IDD3P-F
Symbol
Symbol
IDD4W
IDD4W
IDD2Q
IDD2Q
IDD2P
IDD2N
IDD3N
IDD4R
IDD5B
IDD2P
IDD2N
IDD3N
IDD4R
IDD5B
IDD0
IDD1
IDD6
IDD7
IDD0
IDD1
IDD6
IDD7
(DDR533@CL=4)
(DDR533@CL=4)
1,200
1,100
1,060
1,840
1,560
CD5
CD5
760
860
200
240
240
120
560
480
580
100
120
120
280
920
820
780
64
44
32
60
22
(T
A
=0
o
C, VDD= 1.9V)
(DDR533@CL=4)
(DDR533@CL=4)
1,060
LD5
LD5
460
560
200
200
120
120
260
700
700
860
360
460
100
100
160
600
600
760
960
64
40
32
60
60
20
(DDR400@CL=3)
(DDR400@CL=3)
1,000
1,000
1,760
1,500
CCC
CCC
720
760
200
240
240
120
520
940
460
500
100
120
120
260
740
680
740
64
44
32
60
22
(DDR400@CL=3)
(DDR400@CL=3)
1,060
LCC
LCC
460
520
200
200
120
120
260
700
700
860
360
420
100
100
160
520
520
760
960
64
40
32
60
60
20
Rev. 1.5 Aug. 2005
DDR2 SDRAM
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes
Notes