hys64t32000hm-5-a Infineon Technologies Corporation, hys64t32000hm-5-a Datasheet - Page 20

• Manufacturer Part Number: hys64t32000hm-5-a
• Description: 240-pin Registered Ddr2 Sdram Modules
• Manufacturer: Infineon Technologies Corporation

Table 11
Parameter
Device Supply Voltage
Output Supply Voltage
Input Reference Voltage
SPD Supply Voltage
DC Input Logic High
DC Input Logic Low
In / Output Leakage Current
1) Under all conditions,
2) Peak to peak AC noise on
3) Input voltage for any connector pin under test of 0 V
3.3
3.3.1
Table 12
Speed Grade
IFX Sort Name
CAS-RCD-RP latencies
Parameter
Clock Frequency
Row Active Time
Row Cycle Time
RAS-CAS-Delay
Row Precharge Time
1) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a
2) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross. The DQS/DQS,
3) Inputs are not recognized as valid until
4) The output timing reference voltage level is
5)
Data Sheet
differential Slew Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode. Timings are
further guaranteed for normal OCD drive strength (EMRS(1) A1 = 0) only.
RDQS/RDQS, input reference level is the crosspoint when in differential strobe mode
recognized as low.
t
equal to 9 x
RAS.MAX
is calculated from the maximum amount of time a DDR2 device can operate without a refresh command which is
Supply Voltage Levels and DC Operating Conditions
AC Characteristics
Speed Grade Definitions
Speed Grade Definition Speed Bins for DDR2-667D, DDR2–533C and DDR2–400B
t
REFI
.
@ CL = 3
@ CL = 4
@ CL = 5
V
DDQ
must be less than or equal to
V
REF
Symbol
V
V
V
V
V
V
I
may not exceed ± 2%
t
t
t
t
t
t
t
L
Symbol
CK
CK
CK
RAS
RC
RCD
RP
DD
DDQ
REF
DDSPD
IH (DC)
IL (DC)
V
REF
V
DDR2–667D
–3S
5–5–5
Min.
5
3.75
3
45
60
15
15
TT
stabilizes. During the period before
Values
Min.
1.7
1.7
0.49 x
1.7
V
– 0.30
– 5
.
REF
+ 0.125
8
8
8
70000
—
—
—
V
V
V
IN
REF (DC)
DDQ
V
20
DD
V
DDQ
.
V
DDR2–533C
–3.7
4–4–4
Min.
5
3.75
3.75
45
60
15
15
Nom.
1.8
1.8
0.5 x
—
—
—
REF
+ 0.3 V; all other pins at 0 V. Current is per pin
HYS64T[32/64]0[0/2]0HM–[3S/3.7/5]–A
is also expected to track noise in
Micro-DIMM DDR2 SDRAM Modules
V
DDQ
Max.
8
8
8
70000
—
—
—
Max.
1.9
1.9
0.51 x
3.6
V
V
5
V
DDQ
REF
DDR2–400B
–5
3–3–3
Min.
5
5
5
40
55
15
15
REF
– 0.125
+ 0.3
stabilizes, CKE = 0.2 x
V
Electrical Characteristics
DDQ
Max.
8
8
8
70000
—
—
—
03242004-2CBE-IJ2X
Unit
V
V
V
V
V
V
Rev. 1.1, 2005-10
V
A
DDQ
Unit
t
—
ns
ns
ns
ns
ns
ns
ns
CK
.
Note
1)
2)
3)
Notes
1)2)3)4)
5)
V
DDQ
is