k9f4g08u0m-y Samsung Semiconductor, Inc., k9f4g08u0m-y Datasheet - Page 15

• Manufacturer Part Number: k9f4g08u0m-y
• Description: 512m X 8 Bits / 1g X 8 Bits Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9K8G08U1M
K9F4G08U0M
NAND Flash Technical Notes
Erase Flow Chart
*
* Step1
When an error happens in the nth page of the Block ’A’ during erase or program operation.
* Step2
Copy the data in the 1st ~ (n-1)th page to the same location of another free block. (Block ’B’)
* Step3
Then, copy the nth page data of the Block ’A’ in the buffer memory to the nth page of the Block ’B’.
* Step4
Do not erase or program to Block ’A’ by creating an ’invalid block’ table or other appropriate scheme.
Block Replacement
Erase Error
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
1st
(n-1)th
nth
(page)
1st
(n-1)th
nth
(page)
x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x
No
an error occurs.
Read Status Register
Write Block Address
Erase Completed
Block A
Block B
or R/B = 1 ?
I/O 0 = 0 ?
Write D0h
I/O 6 = 1 ?
Write 60h
Start
Yes
Yes
(Continued)
1
2
Buffer memory of the controller.
No
15
Reclaim the Error
Read Flow Chart
No
Page Read Completed
FLASH MEMORY
ECC Generation
Write Address
Verify ECC
Read Data
Write 00h
Write 30h
Start
Yes
Advance