k9f4g08u0m-y Samsung Semiconductor, Inc., k9f4g08u0m-y Datasheet - Page 20

• Manufacturer Part Number: k9f4g08u0m-y
• Description: 512m X 8 Bits / 1g X 8 Bits Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

Status Read Cycle & EDC Status Read Cycle
K9K8G08U1M
K9F4G08U0M
I/Ox
Serial Access Cycle after Read
CE
RE
R/B
CLE
CE
WE
RE
I/Ox
x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x
t
RR
NOTES : Transition is measured 200mV from steady state voltage with load.
t
RP
t
t
REA
CEA
t
RC
This parameter is sampled and not 100% tested.
tRLOH is valid when frequency is higher than 33MHz.
tRHOH starts to be valid when frequency is lower than 33MHz.
t
REH
(EDO Type, CLE=L, WE=H, ALE=L)
t
Dout
CLS
t
CS
70h or 7Bh
t
t
RLOH
WP
t
DS
t
REA
t
t
t
x x x x
x x x x
x x x x
x x x x
x x x x
x x x x
x x x x
CH
DH
CLH
x x x x x x x x x x x x x x
x x x x x x x x x x x x x x
x x x x x x x x x x x x x x
x x x x x x x x x x x x x x
x x x x x x x x x x x x x x
x x x x x x x x x x x x x x
x x x x x x x x x x x x x x
x x x x x x x x x x x x x x
x x x x x x x x x x x x x x
x x x x x x x x x x x x x x
x x x x x x x x x x x x x x
x x x x x x x x x x x x x x
x x x x x x x x x x x x x x
20
t
WHR
t
CLR
t
IR
t
CEA
t
REA
FLASH MEMORY
Status Output
x x x x
x x x x
x x x x
x x x x
x x x x
x x x x
x x x x
x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x
t
RHOH
t
t
t
t
t
t
RHZ
CHZ
t
COH
RHOH
CHZ
RHZ
Dout
COH
Advance