k4h280438c-tlb3 Samsung Semiconductor, Inc., k4h280438c-tlb3 Datasheet - Page 41

• Manufacturer Part Number: k4h280438c-tlb3
• Description: 128mb C-die X4/8 Ddr Sdram
• Manufacturer: Samsung Semiconductor, Inc.

128Mb C-die(x4/8) DDR SDRAM
Recommended operating conditions(Voltage referenced to V
6. Absolute Maximum Rating
Note :
7. DC Operating Conditions & Specifications
7.1 DC Operating Conditions
Supply voltage(for device with a nominal V
I/O Supply voltage
I/O Reference voltage
I/O Termination voltage(system)
Input logic high voltage
Input logic low voltage
Input Voltage Level, CK and CK inputs
Input Differential Voltage, CK and CK inputs
Input crossing point voltage, CK and CK inputs
Input leakage current
Output leakage current
Output High Current(Normal strengh driver)
Output High Current(Normal strengh driver)
Output High Current(Half strengh driver)
Output High Current(Half strengh driver)
;V
;V
;V
;V
OUT
OUT
OUT
OUT
Voltage on V
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Functional operation should be restricted to recommend operation condition.
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
= V
= V
= V
= V
TT
TT
TT
TT
Voltage on any pin relative to V
+ 0.84V
+ 0.45V
- 0.84V
- 0.45V
Storage temperature
DD
Short circuit current
Power dissipation
Parameter
& V
Parameter
DDQ
supply relative to V
Table 10. Absolute maximum ratings
DD
SS
of 2.5V)
Table 11. DC operating condition
SS
SS
Symbol
- 41 -
V
V
V
V
V
=0V, T
V
V
IH
IN
ID
IX
IL
V
V
I
I
I
I
I
DDQ
REF
O H
O H
(DC)
(DC)
OZ
OL
OL
(DC)
(DC)
(DC)
I
DD
T T
I
V
V
Symbol
DD
I N
T
, V
I
, V
P
A
STG
OS
=0 to 70 C)
D
OUT
DDQ
VDDQ/2-50mV
V
V
REF
REF
-16.8
Min
1.15
16.8
-0.3
-0.3
2.3
2.3
0.3
-2
-5
-9
9
+0.15
-0.04
-55 ~ +150
-0.5 ~ 3.6
-1.0 ~ 3.6
VDDQ/2+50mV
Value
REV. 0.9 Jan.25. 2002
V
1.5
V
50
V
V
V
REF
REF
DDQ
DDQ
DDQ
Max
1.35
2.7
2.7
2
5
+0.04
-0.15
+0.3
+0.3
+0.6
Unit
mA
mA
mA
mA
uA
uA
V
V
V
V
V
V
V
V
Unit
mA
W
V
V
C
Note
1
2
4
4
3
5