k4h280438c-tlb3 Samsung Semiconductor, Inc., k4h280438c-tlb3 Datasheet - Page 51

• Manufacturer Part Number: k4h280438c-tlb3
• Description: 128mb C-die X4/8 Ddr Sdram
• Manufacturer: Samsung Semiconductor, Inc.

128Mb C-die(x4/8) DDR SDRAM
11. IBIS: I/V Characteristics for Input and Output Buffers
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for device drain to source
6. The Full variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device drain to source voltages
11.1 Normal strength driver
1. The full variation in driver pulldown current from minimum to maximum process, temperature, and voltage will lie within the outer
2. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie within the outer
3. The full variation in driver pullup current from minimum to maximun process, temperature, and voltage will lie within the outer
4. The variation in the driver pullup current at nominal temperature and voltage is expected, but not guaranteed, to lie within the
bounding lines of the V-I curve of Figure a.
bounding lines the of the V-I curve of Figure a.
bounding lines of the V-I curve of Figure b.
inner boungding lines of the V-I curve of Figure b as
voltage from 0 to VDDQ/2
from 0 to VDDQ/2
Figure 27. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
-100
-120
-140
-160
-180
-200
-220
160
140
120
100
-20
-40
-60
-80
8 0
6 0
4 0
2 0
0
0
0.0
0.0
0.5
0.5
1.0
1.0
- 51 -
1.5
1.5
2.0
2.0
REV. 0.9 Jan.25. 2002
2.5
2.5
Vout(V)
Vout(V)
Maximum
Typical High
Typical Low
Minimum
Typical Low
Typical High
Maximum
Minumum