k4h280438c-tlb3 Samsung Semiconductor, Inc., k4h280438c-tlb3 Datasheet - Page 53

• Manufacturer Part Number: k4h280438c-tlb3
• Description: 128mb C-die X4/8 Ddr Sdram
• Manufacturer: Samsung Semiconductor, Inc.

128Mb C-die(x4/8) DDR SDRAM
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for device drain to source
6. The Full variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device drain to source voltages
11.2 Weak strength driver
1. The nominal pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.
2. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie within the outer
3. Thenominal pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.
4. The Full variation in driver pullup current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines the of the V-I curve of Figure a.
bounding lines of the V-I curve of Figrue b.
voltage from 0 to VDDQ/2
from 0 to VDDQ/2
Figure 28. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
9 0
8 0
7 0
6 0
5 0
4 0
3 0
2 0
1 0
-10
-20
-30
-40
-50
-60
-70
-80
-90
0
0
0.0
0.0
0.5
1.0
1.0
- 53 -
1.5
2.0
2.0
REV. 0.9 Jan.25. 2002
2.5
Vout(V)
Vout(V)
Maximum
Typical High
Typical Low
Minimum
Typical Low
Typical High
Maximum
Minumum