tpcp8203 TOSHIBA Semiconductor CORPORATION, tpcp8203 Datasheet - Page 3

• Manufacturer Part Number: tpcp8203
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge1
Gate-drain (“Miller”) charge
Drain reverse current
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Pulse (Note 1)
(Ta = 25°C)
V
V
R
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
DS (ON)
V
Q
I
I
C
I
C
|Y
C
Q
GSS
DSS
DRP
V
t
t
Q
DSF
oss
on
off
gs1
t
t
iss
rss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
Duty < = 1%, t
V
I
I
D
D
V
D
DR
GS
DS
DS
GS
GS
DS
DS
DD
GS
= 10 mA, V
= 10 mA, V
= 4.7 A
3
= 4.7 A, V
(Ta = 25°C)
= ±16 V, V
= 40 V, V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 10 V, I
= 10 V, V
∼ − 32 V, V
10 V
0 V
Test Condition
Test Condition
w
D
D
D
GS
GS
D
GS
GS
GS
= 10 μs
GS
= 1 mA
= 2.4A
DS
= 2.4A
= 2.4 A
⎯
= 0 V
= -20 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 10 V,
V
= 0 V
I
D
DD
= 2.4 A
∼ − 20 V
Output
Min
Min
1.3
4.3
40
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
Typ.
770
105
8.6
2.5
43
31
70
15
70
16
⎯
⎯
⎯
⎯
⎯
⎯
⎯
8
9
4
TPCP8203
2007-02-28
Max
Max
18.8
±10
-1.2
2.5
10
60
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
nC
μA
μA
pF
ns
A
V
V
V
S