tpcp8203 TOSHIBA Semiconductor CORPORATION, tpcp8203 Datasheet - Page 4
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tpcp8203
Manufacturer Part Number
tpcp8203
Description
Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos?
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TPCP8203.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
100
0.1
10
20
16
12
10
8
6
4
2
0
8
4
0
1
0.1
0
0
Common source
VDS = 10 V
Single Pulse test
Common source
VDS = 10 V
Single Pulse test
5
Drain−source voltage V
Gate−source voltage V
6
Ta = −55°C
0.2
8
2
10
Drain current I
100
1
0.4
25
I
I
|Y
D
D
fs
Ta = −55°C
– V
– V
25
| – I
4
4.5
100
DS
GS
D
0.6
D
3.8
4
10
GS
(A)
DS
Common source
Tc = 25°C
Single Pulse test
3.6
6
V GS = 2.8 V
0.8
(V)
(V)
3.2
3
3.4
100
1
8
4
100
1.0
0.8
0.6
0.4
0.2
20
16
12
10
0
8
4
0
0.1
0
0
Common source
Tc = 25°C
Single Pulse test
6
8
10
2
Drain−source voltage V
1.2
Gate−source voltage V
1
4.5
Drain current I
5
4
I D = 4.7A
1
R
V GS = 10 V
V
DS (ON)
2
I
DS
6
D
4.5
– V
– V
2.4
DS
8
GS
– I
3
D
D
10
Common source
Ta = 25°C
Single Pulse test
GS
(A)
DS
10
Common source
Tc = 25°C
Single Pulse test
V GS = 3 V
4
(V)
(V)
3.6
3.2
3.8
3.4
TPCP8203
4
12
2007-02-28
100
14
5