tpcp8102 TOSHIBA Semiconductor CORPORATION, tpcp8102 Datasheet - Page 2

• Manufacturer Part Number: tpcp8102
• Description: Toshiba Field Effect Transistor Silicon P-channel Mos Type U-mos ??
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Thermal Characteristics
Thermal resistance, channel to ambient (t = 5 s)
Thermal resistance, channel to ambient (t = 5 s)
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: Repetitive rating: pulse width limited by maximum channel temperature.
Note 5: • on the lower left of the marking indicates Pin 1.
* Weekly code (three digits):
DD
= -16 V, T
Characteristics
(a)
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
ch
= 25°C (initial), L = 0.5 mH, R
25.4 × 25.4 × 0.8
(Note 2a)
(Note 2b)
FR-4
(Unit: mm)
R
R
Symbol
th (ch-a)
th (ch-a)
2
G
= 25 Ω, I
148.8
Max
74.4
(b) Device mounted on a glass-epoxy board (b)
AR
°C/W
°C/W
Unit
= -7.2 A
(b)
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
TPCP8102
2006-11-17